Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
TSPB5H150S S1G

TSPB5H150S S1G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 150V 5A SMPC4.0

0

FR106G R0G

FR106G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 1A DO204AL

0

S3KBHM4G

S3KBHM4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 3A DO214AA

0

MUR105SHM4G

MUR105SHM4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A DO214AA

0

HS3GB M4G

HS3GB M4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 3A DO214AA

0

BAV19W RHG

BAV19W RHG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 250V 200MA SOD123

0

ES1LDHM2G

ES1LDHM2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO214AC

0

SKL13B R5G

SKL13B R5G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 30V 1A DO214AA

0

UF1D A0G

UF1D A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO204AL

0

2A05G A0G

2A05G A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 2A DO204AC

0

LL4148 L1G

LL4148 L1G

TSC (Taiwan Semiconductor)

DIODE GP 100V 150MA MINIMELF

11226

SFS1603G MNG

SFS1603G MNG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 150V 16A TO263AB

0

SK53C V7G

SK53C V7G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 5A 30V DO-214AB

0

S1GL RUG

S1GL RUG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1A SUB SMA

0

RS3DHR7G

RS3DHR7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 3A DO214AB

0

1N5818HA0G

1N5818HA0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 30V 1A DO204AL

0

SF15G R0G

SF15G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 300V 1A DO204AL

0

ES2J R5G

ES2J R5G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 2A DO214AA

1184

SR006 R0G

SR006 R0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 60V 500MA DO204AL

0

RS3D R7G

RS3D R7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 3A DO214AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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