Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
HS5J V6G

HS5J V6G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 5A DO214AB

0

SK515BHM4G

SK515BHM4G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 150V 5A DO214AA

0

HER158G R0G

HER158G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 1.5A DO204AC

0

RS1GLWHRVG

RS1GLWHRVG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1A SOD123W

53004

TPMR10D S1G

TPMR10D S1G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 10A TO277A

9343

SK215AHM2G

SK215AHM2G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 150V 2A DO214AC

0

SF44G R0G

SF44G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 4A DO201AD

0

HER208G R0G

HER208G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 2A DO204AC

0

S1M-KR2G

S1M-KR2G

TSC (Taiwan Semiconductor)

STANDARD RECOVERY RECTIFIER

0

1N5404G A0G

1N5404G A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 3A DO201AD

0

SFAF2004G C0G

SFAF2004G C0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 20A ITO220AC

0

UF4001 R0G

UF4001 R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A DO204AL

0

HS1ML R3G

HS1ML R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 1KV 1A SUB SMA

3790

S1DLHRVG

S1DLHRVG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A SUB SMA

0

MUR120SHM4G

MUR120SHM4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO214AA

0

SK33B M4G

SK33B M4G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 30V 3A DO214AA

0

RS3K V6G

RS3K V6G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 3A DO214AB

0

RS1G M2G

RS1G M2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1A DO214AC

0

RS1GL R3G

RS1GL R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 800MA SUBSMA

1405

3A100 B0G

3A100 B0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 3A DO204AC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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