Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SK39A

SK39A

SURGE

3A -90V - SMA (DO-214AC) - RECTI

250

SK34A

SK34A

SURGE

3A -40V - SMA (DO-214AC) - RECTI

248

SL54B

SL54B

SURGE

5A -40V - SMB (DO-214AA) - RECTI

0

SK5B5C

SK5B5C

SURGE

5A -150V - SMC (DO-214AB) - RECT

250

GN3M

GN3M

SURGE

3A -1000V - SMC (DO-214AB) - REC

0

GR3GB

GR3GB

SURGE

3A -400V - SMB (DO-214AA) - RECT

250

SK2C0B

SK2C0B

SURGE

2A -200V - SMB (DO-214AA) - RECT

250

GR1M

GR1M

SURGE

1A -1000V - SMA (DO-214AC) - REC

50

FH3

FH3

SURGE

1A -200V - ESGA - RECTIFIER

250

AFU4

AFU4

SURGE

1A -400V - ESGA (SOD-123FL) - RE

0

PU3

PU3

SURGE

1A -200V - ISGA - RECTIFIER

250

SK34

SK34

SURGE

3A -40V - SMC (DO-214AB) - RECTI

250

SK1B5

SK1B5

SURGE

1A -150V - SMA (DO-214AC) - RECT

250

FF4

FF4

SURGE

1A -400V - ESGA (SOD-123FL) - RE

250

SL36B

SL36B

SURGE

3A -60V - SMB (DO-214AA) - RECTI

250

SL14A

SL14A

SURGE

1A -40V - SMA (DO-214AC) - RECTI

0

HS3F

HS3F

SURGE

3A -300V - SMC (DO-214AB) - RECT

250

SK36A

SK36A

SURGE

3A -60V - SMA (DO-214AC) - RECTI

250

GROM

GROM

SURGE

1.5A -1000V - SMB (DO-214AA) - R

250

RS1004FL

RS1004FL

SURGE

1A -400V - ESGA - RECTIFIER

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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