Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
STTH108RL

STTH108RL

STMicroelectronics

DIODE GEN PURP 800V 1A DO41

0

BYT08P-1000

BYT08P-1000

STMicroelectronics

DIODE GEN PURP 1KV 8A TO220AC

0

STTH2R02QRL

STTH2R02QRL

STMicroelectronics

DIODE GEN PURP 200V 2A DO15

0

BYT30G-400-TR

BYT30G-400-TR

STMicroelectronics

DIODE GEN PURP 400V 30A D2PAK

0

STTH40P03ST

STTH40P03ST

STMicroelectronics

DIODE GEN PURP 300V 40A TO220AB

0

STPS2L60RL

STPS2L60RL

STMicroelectronics

DIODE SCHOTTKY 60V 2A DO41

0

STTH112

STTH112

STMicroelectronics

DIODE GEN PURP 1.2KV 1A DO41

0

STPS5L60RL

STPS5L60RL

STMicroelectronics

DIODE SCHOTTKY 60V 5A DO201AD

0

STPS8L30H

STPS8L30H

STMicroelectronics

DIODE SCHOTTKY 30V 8A IPAK

0

BAT30WFILM

BAT30WFILM

STMicroelectronics

DIODE SCHOTTKY 30V 300MA SOT323

0

STTH5R06G

STTH5R06G

STMicroelectronics

DIODE GEN PURP 600V 5A D2PAK

0

STTA506D

STTA506D

STMicroelectronics

DIODE GEN PURP 600V 5A TO220AC

0

STTH312B

STTH312B

STMicroelectronics

DIODE GEN PURP 1.2KV 3A DPAK

0

STTH2002G

STTH2002G

STMicroelectronics

DIODE GEN PURP 200V 20A D2PAK

0

BYT30PI-1000

BYT30PI-1000

STMicroelectronics

DIODE GEN PURP 1KV 30A DOP3I

0

STPS1L60

STPS1L60

STMicroelectronics

DIODE SCHOTTKY 60V 1A DO41

0

BYT30PI-1000RG

BYT30PI-1000RG

STMicroelectronics

DIODE GEN PURP 1KV 30A DOP3I

0

BAS70WFILM

BAS70WFILM

STMicroelectronics

DIODE SCHOTTKY 70V 70MA SOT323

0

STTH5L06B

STTH5L06B

STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

0

STTH810G

STTH810G

STMicroelectronics

DIODE GEN PURP 1KV 8A D2PAK

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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