Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
STTH3BCF060U

STTH3BCF060U

STMicroelectronics

DIODE GEN PURP 600V 3A SMB

36

STPSC8H065D

STPSC8H065D

STMicroelectronics

DIODE SCHOTTKY 650V 8A TO220AC

0

STTH1R06RL

STTH1R06RL

STMicroelectronics

DIODE GEN PURP 600V 1A DO41

10082

STPSC6H065DLF

STPSC6H065DLF

STMicroelectronics

SILICON CARBIDE DIODES

5994

STTH1L06

STTH1L06

STMicroelectronics

DIODE GEN PURP 600V 1A DO41

6922

STTH1R04UY

STTH1R04UY

STMicroelectronics

DIODE GEN PURP 400V 1A SMB

0

STTH302RL

STTH302RL

STMicroelectronics

DIODE GEN PURP 200V 3A DO201AD

4303

STTH4R02UY

STTH4R02UY

STMicroelectronics

DIODE GEN PURP 200V 4A SMB

93

STPSC8H065G2Y-TR

STPSC8H065G2Y-TR

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE

262

STTH806G-TR

STTH806G-TR

STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

0

STPS30L30DJF-TR

STPS30L30DJF-TR

STMicroelectronics

DIODE SCHOTTKY 30V 30A POWERFLAT

8914

STPS1150AY

STPS1150AY

STMicroelectronics

DIODE SCHOTTKY 150V 1A SMA

37698

STPS30SM120SFP

STPS30SM120SFP

STMicroelectronics

DIODE SCHOTTKY 120V TO220FPAB

240

BAT48

BAT48

STMicroelectronics

DIODE SCHOTTKY 40V 350MA DO35

401

STTH3R02

STTH3R02

STMicroelectronics

DIODE GEN PURP 200V 3A DO201AD

7349

STTH2R06A

STTH2R06A

STMicroelectronics

DIODE GEN PURP 600V 2A SMA

0

STTH30R04WY

STTH30R04WY

STMicroelectronics

DIODE GEN PURP 400V 30A DO247

0

STTH4R02B-TR

STTH4R02B-TR

STMicroelectronics

DIODE GEN PURP 200V 4A DPAK

3855

STPS30170DJF-TR

STPS30170DJF-TR

STMicroelectronics

DIODE SCHOTTKY 170V 30A POWRFLAT

1785

STTH12R06DIRG

STTH12R06DIRG

STMicroelectronics

DIODE GEN PURP 600V 12A TO220AC

2648

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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