Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RD0306T-TL-H

RD0306T-TL-H

Sanyo Denki SanUPS Products

LOW VF HIGH-SPEED DIFFUSED JUNCT

5600

1SS350-TB-E

1SS350-TB-E

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SILICON EPITAXIAL SCHOTTKY

2794

SB50-18

SB50-18

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RECTIFIER SCHOTTKY BARRIER DIODE

22315

DS135AE

DS135AE

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SILICON DIODE POWER RECTIFIER

308310

NSR05F30NRT5G

NSR05F30NRT5G

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SCHOTTKY BARRIER DIODE

40000

DSK10B

DSK10B

Sanyo Denki SanUPS Products

1.0 A POWER RECTIFIER

116710

SB007T03Q-TL-E-SY

SB007T03Q-TL-E-SY

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30 V, 70 MILLI AMP SCHOTTKY BARR

18000

SB10-03A-2

SB10-03A-2

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30V 1.0 AMP SCHOTTKY BARRIER DIO

7000

DA573S6-TL-H

DA573S6-TL-H

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SILICON DIFFUSED JUNCTION TYPE D

175000

DWC010-TE-E

DWC010-TE-E

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SILICON EPITAXIAL PLANAR

90000

RD0506LS-SB5

RD0506LS-SB5

Sanyo Denki SanUPS Products

ULTRAHIGH-SPEED DIFFUSED JUNCTIO

2000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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