Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RN 2ZV

RN 2ZV

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 2A AXIAL

0

EK 16V0

EK 16V0

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 1.5A AXIAL

0

AU02AV0

AU02AV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 800MA AXIAL

0

SARS01V

SARS01V

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 3A AXIAL

0

AU01WS

AU01WS

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 500MA AXIAL

0

RU 3AMV

RU 3AMV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1.5A AXIAL

0

SJPL-H2VR

SJPL-H2VR

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 2A 2SMD

0

RU 2MV

RU 2MV

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.1A AXIAL

0

ES01FV0

ES01FV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 1.5KV 500MA AXIAL

0

EU02W

EU02W

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

ES 1ZV0

ES 1ZV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 700MA AXIAL

0

AM01ZWS

AM01ZWS

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

ES 1V0

ES 1V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 700MA AXIAL

0

SARS02V

SARS02V

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

0

EG01W

EG01W

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 700MA AXIAL

0

EK 19V

EK 19V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 1.5A AXIAL

0

RU 2BV

RU 2BV

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1A AXIAL

0

EK 09V1

EK 09V1

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 700MA AXIAL

0

EM 2AV

EM 2AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1.2A AXIAL

0

EU01W

EU01W

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 250MA AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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