Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R5030813LSWA

R5030813LSWA

Powerex, Inc.

DIODE GEN PURP 800V 125A DO205AA

0

R7013803XXUA

R7013803XXUA

Powerex, Inc.

DIODE GEN PURP 3.8KV 300A DO200

0

PS410625

PS410625

Powerex, Inc.

DIODE GP 600V 2500A POWRBLOK

0

A398M

A398M

Powerex, Inc.

DIODE GEN PURP 600V 400A DO200AA

0

R6201040XXOO

R6201040XXOO

Powerex, Inc.

DIODE GP 1KV 400A DO200AA R62

0

R5021613FSWA

R5021613FSWA

Powerex, Inc.

DIODE GEN PURP 1.6KV 125A DO205

0

1N3741R

1N3741R

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

R7201406XXOO

R7201406XXOO

Powerex, Inc.

DIODE GP 1.4KV 600A DO200AB

0

A190RB

A190RB

Powerex, Inc.

DIODE GEN PURP 300V 250A DO205AB

0

R7221008ESOO

R7221008ESOO

Powerex, Inc.

DIODE GEN PURP 1KV 800A DO200AB

0

RA202425XX

RA202425XX

Powerex, Inc.

DIODE GP 2.4KV 2500A POWRDISC

0

R6201440XXOO

R6201440XXOO

Powerex, Inc.

DIODE GP 1.4KV 400A DO200AA R62

0

R7221406HSOO

R7221406HSOO

Powerex, Inc.

DIODE GP 1.4KV 650A DO200AB

0

R6021222PSYA

R6021222PSYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 220A DO205

0

R7203506XXOO

R7203506XXOO

Powerex, Inc.

DIODE GP 3.5KV 600A DO200AA R62

0

R7011005XXUA

R7011005XXUA

Powerex, Inc.

DIODE GEN PURP 1KV 550A DO200

0

R6030635ESYA

R6030635ESYA

Powerex, Inc.

DIODE GEN PURP 600V 350A DO205AB

0

R9G02018XX

R9G02018XX

Powerex, Inc.

DIODE GEN PURP 2KV 1800A DO200AB

0

1N3165R

1N3165R

Powerex, Inc.

DIODE STUD MNT 240A 250V DO-9

0

1N3263

1N3263

Powerex, Inc.

DIODE GEN PURP 200V 160A DO205AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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