Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
VS-MUR1520-M3

VS-MUR1520-M3

Vishay General Semiconductor – Diodes Division

DIODE FRED 200V 15A TO220AB

1909

BAT46

BAT46

STMicroelectronics

DIODE SCHOTTKY 100V 150MA DO35

21793

FR152G R0G

FR152G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1.5A DO204AC

0

ES2F-E3/52T

ES2F-E3/52T

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 300V 2A DO214AA

133

S1JLWHRVG

S1JLWHRVG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1A SOD123W

0

1N4007GPE-E3/53

1N4007GPE-E3/53

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

0

GP10G-E3/54

GP10G-E3/54

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 400V 1A DO204AL

573

UPR40E3/TR13

UPR40E3/TR13

Roving Networks / Microchip Technology

DIODE GEN PURP 400V 2A POWERMITE

0

1N5402RL

1N5402RL

RECTIFIER DIODE

0

RS1KL RQG

RS1KL RQG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 800MA SUBSMA

0

B350A-E3/5AT

B350A-E3/5AT

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

0

DZ600N12KHPSA1

DZ600N12KHPSA1

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 735A MODULE

3

LL4151-M-18

LL4151-M-18

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 50V 300MA SOD80

0

SJPL-L2

SJPL-L2

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 3A SJP

0

NTE6104

NTE6104

NTE Electronics, Inc.

R-1200 PRV 550A CATH CASE

2

1N4005GHA0G

1N4005GHA0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1A DO204AL

0

FR305G B0G

FR305G B0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 3A DO201AD

0

RGL34JHE3/98

RGL34JHE3/98

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 500MA DO213

0

S1DFSHMWG

S1DFSHMWG

TSC (Taiwan Semiconductor)

DIODE, 1A, 200V, AEC-Q101, SOD-1

6624

MUR320SBHR5G

MUR320SBHR5G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 3A DO214AA

1454

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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