Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
2950077

2950077

Phoenix Contact

DIODE MODULE 1.3KV 700MA

1

2950103

2950103

Phoenix Contact

DIODE MODULE 1.3KV 700MA

8

2954895

2954895

Phoenix Contact

DIODE MODULE 1.3KV 500MA

0

2950129

2950129

Phoenix Contact

DIODE MODULE 1.3KV 700MA

2

2950064

2950064

Phoenix Contact

DIODE MODULE 1.3KV 700MA

0

2950132

2950132

Phoenix Contact

DIODE MODULE 1.3KV 700MA

2

2952211

2952211

Phoenix Contact

DIODE MODULE 1KV

0

2952790

2952790

Phoenix Contact

DIODE MODULE 1KV 1.5A

1647

2954808

2954808

Phoenix Contact

DIODE MODULE 1.3KV 400MA

0

2954798

2954798

Phoenix Contact

DIODE MODULE 1.3KV 400MA

0

2954879

2954879

Phoenix Contact

DIODE MODULE 1KV 300MA

0

2952198

2952198

Phoenix Contact

DIODE MODULE 1KV

0

2954918

2954918

Phoenix Contact

DIODE MODULE 1.3KV 700MA

0

2320157

2320157

Phoenix Contact

DIODE MODULE 24V 20A DIN RAIL

3852

2949389

2949389

Phoenix Contact

DIODE MODULE 1KV 1.5A

16197

2320160

2320160

Phoenix Contact

DIODE MODULE 48V 20A DIN RAIL

0

2954934

2954934

Phoenix Contact

DIODE MODULE 1.3KV

0

2954785

2954785

Phoenix Contact

DIODE MODULE 1.3KV 200MA

32

2950048

2950048

Phoenix Contact

DIODE MODULE 1.3KV 700MA

13

2954882

2954882

Phoenix Contact

DIODE MODULE 1KV 300MA

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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