Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
KCQ60A04

KCQ60A04

KYOCERA Corporation

DIODE SCHOTTKY 40V 60A TO-247

1007

PD100MYN18

PD100MYN18

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.8KV

24

PD100MYN16

PD100MYN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

22

KCQ60A06

KCQ60A06

KYOCERA Corporation

DIODE SCHOTTKY 60V 60A TO-247

187

PD200MYN16

PD200MYN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

6

PD230S16

PD230S16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PD260MYN16

PD260MYN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PD260MYN18

PD260MYN18

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.8KV

0

PR250KN8N

PR250KN8N

KYOCERA Corporation

DIODE MODULE ANODE COMMON D+D 80

0

PD380MYN16

PD380MYN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PD200MYN18

PD200MYN18

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.8KV

0

PD700MYN16

PD700MYN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PD380MYN18

PD380MYN18

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.8KV

0

PD700MYN18

PD700MYN18

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.8KV

0

PD200KN16

PD200KN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PC201FKN6

PC201FKN6

KYOCERA Corporation

FRD MODULE CATHODE COMMON 600V 2

0

PD100KN16

PD100KN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PD30KN16

PD30KN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PD60KN16

PD60KN16

KYOCERA Corporation

DIODE MODULE PHASE LEG D+D 1.6KV

0

PD201FKN6

PD201FKN6

KYOCERA Corporation

FRD MODULE PHASE LEG D+D 600V 20

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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