Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS7004E6327HTSA1

BAS7004E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 70V SOT23

17920

ND89N08KHPSA1

ND89N08KHPSA1

IR (Infineon Technologies)

RECTIFIER DIODE, 1 PHASE, 89A

15

BAS7005E6327HTSA1

BAS7005E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 70V SOT23

40

DD89N16KKHPSA1

DD89N16KKHPSA1

IR (Infineon Technologies)

DIODE ARRAY MOD 1200V 140A

0

BAS16SH6327XTSA1

BAS16SH6327XTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT363

5693

IDW30C65D2XKSA1

IDW30C65D2XKSA1

IR (Infineon Technologies)

IDW30C65 - SILICON POWER DIODE

193

BAS12505WH6327XTSA1

BAS12505WH6327XTSA1

IR (Infineon Technologies)

BAS125 - HIGH SPEED SWITCHING, C

2000

BAS70-06B5003

BAS70-06B5003

IR (Infineon Technologies)

SCHOTTKY DIODE

60000

BAW56WE6327

BAW56WE6327

IR (Infineon Technologies)

HIGH SPEED SWITCHING DIODE

816000

BAS70-07WH6327

BAS70-07WH6327

IR (Infineon Technologies)

SCHOTTKY DIODE

46709

DD260N18KHPSA1

DD260N18KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 1800V 260A

0

BAV199E6327HTSA1

BAV199E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT23

335343

BAS4004E6433HTMA1

BAS4004E6433HTMA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT23

19751

BAV170E6327

BAV170E6327

IR (Infineon Technologies)

RECTIFIER DIODE

570000

BAW56SH6327XTSA1

BAW56SH6327XTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT363

0

BAT1805E6327

BAT1805E6327

IR (Infineon Technologies)

PIN DIODE, 35V V(BR)

1571

BAS4007E6327HTSA1

BAS4007E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT143

11310

DD435N40KHPSA1

DD435N40KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 4000V 573A

0

BAS16UE6727HTSA1

BAS16UE6727HTSA1

IR (Infineon Technologies)

RECTIFIER DIODE

29000

BAT6406WH6327XTSA1

BAT6406WH6327XTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 40V SOT323

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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