Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS70-04WE6327

BAS70-04WE6327

IR (Infineon Technologies)

SCHOTTKY DIODE

16538

BAT5404E6327HTSA1

BAT5404E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 30V SOT23

39724

SMBD 7000 E6327

SMBD 7000 E6327

IR (Infineon Technologies)

RECTIFIER DIODE

0

DD600N12KHPSA2

DD600N12KHPSA2

IR (Infineon Technologies)

DIODE MODULE GP 1200V 600A

0

BAV70E6327HTSA1

BAV70E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT23

88279

DD350N12KHPSA1

DD350N12KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 1200V 350A

0

DD600N14KHPSA2

DD600N14KHPSA2

IR (Infineon Technologies)

DIODE MODULE GP 1400V 600A

0

IDW20S120FKSA1

IDW20S120FKSA1

IR (Infineon Technologies)

RECTIFIER DIODE

6910

DD380N16AHPSA1

DD380N16AHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 1600V 380A

3

DD750S65K3NOSA1

DD750S65K3NOSA1

IR (Infineon Technologies)

DIODE MODULE GP 6500V AIHV130-6

0

DD261N22KHPSA1

DD261N22KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 2200V 260A

0

DD171N12KHPSA1

DD171N12KHPSA1

IR (Infineon Technologies)

DIODE MODULE GP 1200V 171A

0

DD1200S12H4

DD1200S12H4

IR (Infineon Technologies)

DD1200S12 - RECTIFIER DIODE MODU

30

BAW56SH6727XTSA1

BAW56SH6727XTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT363

0

BAT5406WH6327XTSA1

BAT5406WH6327XTSA1

IR (Infineon Technologies)

BAT54 - HIGH SPEED SWITCHING, CL

111000

BAW156

BAW156

IR (Infineon Technologies)

RECTIFIER DIODE

195000

DD171N12KKHPSA1

DD171N12KKHPSA1

IR (Infineon Technologies)

DIODE ARRAY MOD 1300V 270A

0

BAS 70-05 E6433

BAS 70-05 E6433

IR (Infineon Technologies)

SCHOTTKY DIODE

30000

BAS7006E6327HTSA1

BAS7006E6327HTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 70V SOT23

29850

BAV99SH6327XTSA1

BAV99SH6327XTSA1

IR (Infineon Technologies)

DIODE ARRAY GP 80V 200MA SOT363

18217

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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