Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SK2045CD2R

SK2045CD2R

Diotec Semiconductor

SCHOTTKY D2PAK 45V 20A

0

BAT54S-AQ

BAT54S-AQ

Diotec Semiconductor

SCHOTTKY SOT-23 30V 0.2A

0

SK3020CD2

SK3020CD2

Diotec Semiconductor

SCHOTTKY D2PAK 20V 30A

3030

ER520CT

ER520CT

Diotec Semiconductor

DIODE UFR TO-220AB 200V 10A

0

SK3060CD2

SK3060CD2

Diotec Semiconductor

SCHOTTKY D2PAK 60V 30A

150

SK3045CD2

SK3045CD2

Diotec Semiconductor

SCHOTTKY D2PAK 45V 30A

0

SK20100CD2

SK20100CD2

Diotec Semiconductor

SCHOTTKY D2PAK 100V 20A

1950

BAS40-05

BAS40-05

Diotec Semiconductor

SCHOTTKY SOT-23 40V 0.2A

426000

S16JSD2

S16JSD2

Diotec Semiconductor

DIODE STD D2PAK 600V 16A

0

SK2050CD2

SK2050CD2

Diotec Semiconductor

SCHOTTKY D2PAK 50V 20A

0

SBCT2050

SBCT2050

Diotec Semiconductor

SCHOTTKY TO-220AB 50V 20A

0

SK2045CD2-3G-AQ

SK2045CD2-3G-AQ

Diotec Semiconductor

SCHOTTKY DIODE, TO-263AB/D2PAK,

0

S16MSD2

S16MSD2

Diotec Semiconductor

DIODE STD D2PAK 1000V 16A

0

MBRS20200CT

MBRS20200CT

Diotec Semiconductor

SCHOTTKY D2PAK 200V 20A

0

SBCT1040

SBCT1040

Diotec Semiconductor

SCHOTTKY TO-220AB 40V 10A

0

S16DSD2

S16DSD2

Diotec Semiconductor

DIODE STD D2PAK 200V 16A

0

SK4045CD2-3G

SK4045CD2-3G

Diotec Semiconductor

SCHOTTKY D2PAK 45V 40A

1700

SBCT1045

SBCT1045

Diotec Semiconductor

SCHOTTKY TO-220AB 45V 10A

1000

SK2045CD2

SK2045CD2

Diotec Semiconductor

SCHOTTKY D2PAK 45V 20A

70000

SK2060CD2R

SK2060CD2R

Diotec Semiconductor

SCHOTTKY D2PAK 60V 20A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top