Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
M5060CC600

M5060CC600

Sensata Technologies – Crydom

DIODE MODULE 600V 60A

0

F1857CAD600

F1857CAD600

Sensata Technologies – Crydom

DIODE MODULE 600V 55A

0

B481C-2T

B481C-2T

Sensata Technologies – Crydom

DIODE GEN PURP 600V 35A MODULE

0

M5060CC400

M5060CC400

Sensata Technologies – Crydom

DIODE GEN PURP 400V 60A MODULE

0

F1842RD1400

F1842RD1400

Sensata Technologies – Crydom

DIODE MODULE 1.4KV 40A

0

F1842CCD1200

F1842CCD1200

Sensata Technologies – Crydom

DIODE MODULE 1.2KV 40A

0

F1827CAD1600

F1827CAD1600

Sensata Technologies – Crydom

DIODE MODULE 1.6KV 25A

0

F1842CCD1000

F1842CCD1000

Sensata Technologies – Crydom

DIODE MODULE 1KV 40A

0

F1857RD400

F1857RD400

Sensata Technologies – Crydom

DIODE MODULE 400V 55A

0

F1891RD1200

F1891RD1200

Sensata Technologies – Crydom

DIODE MODULE 1.2KV 90A

0

F1857CCD1000

F1857CCD1000

Sensata Technologies – Crydom

DIODE MODULE 1KV 55A

0

B482F-2

B482F-2

Sensata Technologies – Crydom

DIODE MODULE 1.2KV 35A

0

F1827CCD1200

F1827CCD1200

Sensata Technologies – Crydom

DIODE MODULE 1.2KV 25A

0

F1827CCD1400

F1827CCD1400

Sensata Technologies – Crydom

DIODE MODULE 1.4KV 25A

0

M50100CC400

M50100CC400

Sensata Technologies – Crydom

DIODE MODULE 400V 100A

0

F1892CAD1000

F1892CAD1000

Sensata Technologies – Crydom

DIODE MODULE 1KV 90A

0

F1891RD1000

F1891RD1000

Sensata Technologies – Crydom

DIODE MODULE 1KV 90A

0

F1891RD400

F1891RD400

Sensata Technologies – Crydom

DIODE MODULE 400V 90A

0

F1827RD400

F1827RD400

Sensata Technologies – Crydom

DIODE MODULE 400V 25A

0

F1857CAD1400

F1857CAD1400

Sensata Technologies – Crydom

DIODE MODULE 1.4KV 55A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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