Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
C3D16060D

C3D16060D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 600V TO247

0

C4D10120D

C4D10120D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 1200V TO247

588

C4D20120D

C4D20120D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 1200V TO247

1043

C4D40120D

C4D40120D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 1200V TO247

750

C3D30065D

C3D30065D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 650V TO247

316

C6D20065D

C6D20065D

Wolfspeed - a Cree company

GEN 6 650V 20 A SBD

444

C3D16065D

C3D16065D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 650V TO247

102

C4D15120D

C4D15120D

Wolfspeed - a Cree company

DIODE SCHOTTKY 1.2KV 24.5A TO247

130

C3D20065D

C3D20065D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 650V TO247

6715

C3D20060D

C3D20060D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 600V TO247

1334

C4D30120D

C4D30120D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 1200V 21.5A

392

C6D16065D

C6D16065D

Wolfspeed - a Cree company

GEN 6 650V 16 A SBD

221

CSD20060D

CSD20060D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 600V TO247

0

C2D20120D

C2D20120D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 1200V TO247

0

C2D10120D

C2D10120D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 1200V TO247

0

CSD20030D

CSD20030D

Wolfspeed - a Cree company

DIODE ARRAY SCHOTTKY 300V TO247

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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