Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
VI30200C-E3/4W

VI30200C-E3/4W

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 200V TO262

1000

VS-MURB1020CT-M3

VS-MURB1020CT-M3

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 200V 5A D2PAK

1000

VS-6CWQ06FNTR-M3

VS-6CWQ06FNTR-M3

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 60V DPAK

6150

VI40100G-E3/4W

VI40100G-E3/4W

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 100V TO262

0

V40PW15CHM3/I

V40PW15CHM3/I

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 150V 20A SLIMDPAK

3755

VS-MURB1020CTRHM3

VS-MURB1020CTRHM3

Vishay General Semiconductor – Diodes Division

DIODE STANDARD 200V 5A TO263AB

0

UGF18ACTHE3/45

UGF18ACTHE3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 50V 18A ITO220AB

0

VS-20CTQ040STRR-M3

VS-20CTQ040STRR-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 40V 10A D2PAK

0

VS-MBRB2535CT-M3

VS-MBRB2535CT-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 35V 15A D2PAK

0

VS-C5PX6012L-N3

VS-C5PX6012L-N3

Vishay General Semiconductor – Diodes Division

60A, 1200V, "H" SERIES FRED PT I

233

MBRF2560CT/45

MBRF2560CT/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 60V ITO220

0

VS-12CWQ06FNTRHM3

VS-12CWQ06FNTRHM3

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 60V 6A DPAK

0

VS-UFB130FA60

VS-UFB130FA60

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 87A SOT227

0

V40PW45C-M3/I

V40PW45C-M3/I

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 20A SLIMDPAK

4345

BAS40-05-G3-18

BAS40-05-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 40V SOT23

0

VBT1045CBP-E3/4W

VBT1045CBP-E3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 10A 45V TO-263AB

0

MBRF20H100CT-E3/45

MBRF20H100CT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 100V ITO220

35

SS8P6CHM3_A/H

SS8P6CHM3_A/H

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 60V 4A TO277A

2368

UG18DCT-E3/45

UG18DCT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 200V 18A TO220AB

463

MMBD7000-E3-08

MMBD7000-E3-08

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 100V 200MA SOT23

9945

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top