Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
VS-6CSH02-M3/87A

VS-6CSH02-M3/87A

Vishay General Semiconductor – Diodes Division

DIODE STANDARD 200V 3A TO277A

0

BAS70-04-E3-18

BAS70-04-E3-18

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 70V SOT23

4603

VS-VSKC56/14

VS-VSKC56/14

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 1.4KV 30A ADDAPAK

0

VF30120C-E3/4W

VF30120C-E3/4W

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 120V ITO220

925

30CPQ040

30CPQ040

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 40V TO247AC

0

UG10DCT-E3/45

UG10DCT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 200V 5A TO220AB

265

VF20100C-E3/4W

VF20100C-E3/4W

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 100V ITO220

786

MBRB2090CT-E3/8W

MBRB2090CT-E3/8W

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 90V TO263AB

0

VIT2045C-M3/4W

VIT2045C-M3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 20A 45V TO-262AA

0

VF30200C-E3/4W

VF30200C-E3/4W

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 200V ITO220

1029

VS-12CTQ045STRL-M3

VS-12CTQ045STRL-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 6A D2PAK

0

VS-6CVH01HM3/I

VS-6CVH01HM3/I

Vishay General Semiconductor – Diodes Division

DIODE GEN PURPOSE 100V SLIMDPAK

4497

V60DM45CHM3/I

V60DM45CHM3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 45V TO263AC

1994

VS-MUR1020CT-M3

VS-MUR1020CT-M3

Vishay General Semiconductor – Diodes Division

DIODE FRED 200V 5A TO220AB

86

VS-MBRB2545CT-M3

VS-MBRB2545CT-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 15A D2PAK

0

SS8P6C-M3/86A

SS8P6C-M3/86A

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 60V TO277A

1762

SS10P4C-M3/86A

SS10P4C-M3/86A

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 40V TO277A

0

VS-UFL250CB60

VS-UFL250CB60

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 130A SOT227

0

V20DM45C-M3/I

V20DM45C-M3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 45V TO263AC

1970

BAS40-05-HE3-18

BAS40-05-HE3-18

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 40V SOT23

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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