Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BYVB32-200-E3/81

BYVB32-200-E3/81

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 200V 18A TO263AB

223

V20PWM60C-M3/I

V20PWM60C-M3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTT 60V SLIMDPAK

586

MBRB3045CT-E3/45

MBRB3045CT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 45V TO263AB

0

UGF18CCT-E3/45

UGF18CCT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 150V 18A ITO220AB

0

VS-20CDH02-M3/I

VS-20CDH02-M3/I

Vishay General Semiconductor – Diodes Division

DIODE GP 600V 2X5A TO-263AC

1606

VBT6045C-M3/4W

VBT6045C-M3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 60A 45V TO-263AB

0

VS-HFA16PA120C-N3

VS-HFA16PA120C-N3

Vishay General Semiconductor – Diodes Division

DIODE STANDARD 1200V 8A TO247AC

0

VS-6CSH02HM3/86A

VS-6CSH02HM3/86A

Vishay General Semiconductor – Diodes Division

DIODE HYP FAST 200V 3A TO277A

890

VS-MURB1020CTR-M3

VS-MURB1020CTR-M3

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 200V 5A D2PAK

0

MMBD7000-G3-18

MMBD7000-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 100V 200MA SOT23

0

SS8P5C-M3/86A

SS8P5C-M3/86A

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 50V TO277A

1225

VS-42CTQ030-M3

VS-42CTQ030-M3

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 30V TO220AB

283

V40DM150CHM3/I

V40DM150CHM3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTT 150V TO263AC

1983

V30DM150CHM3/I

V30DM150CHM3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTT 150V TO263AC

930

BAS40-04-G3-08

BAS40-04-G3-08

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 40V SOT23

27723

MBRF2045CT-E3/45

MBRF2045CT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 45V ITO220

0

VS-20CTQ035S-M3

VS-20CTQ035S-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 35V 10A D2PAK

0

VS-16CTQ100SHM3

VS-16CTQ100SHM3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

0

V40M150C-M3/4W

V40M150C-M3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 150V TO220

22

VS-15CTQ045STRL-M3

VS-15CTQ045STRL-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 7.5A D2PAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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