Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SR3090PTHC0G

SR3090PTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 90V TO247AD

0

SR4020PTHC0G

SR4020PTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 20V TO247AD

0

GP1601HC0G

GP1601HC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 50V 16A TO220AB

0

MBR1035CTHC0G

MBR1035CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 35V TO220AB

0

SRF1620HC0G

SRF1620HC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 20V ITO220AB

0

MBR20100PTHC0G

MBR20100PTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 100V TO247

0

SR3050PT C0G

SR3050PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 50V TO247AD

0

MBRS1035CTHMNG

MBRS1035CTHMNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 35V TO263AB

0

MBRS1590CT MNG

MBRS1590CT MNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 90V TO263AB

0

MBR10150CTHC0G

MBR10150CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 150V TO220

0

SRF20150 C0G

SRF20150 C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 150V ITO220AB

0

SRS1650 MNG

SRS1650 MNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 50V TO263AB

0

MUR1640CT C0G

MUR1640CT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 400V 16A TO220AB

0

SRF1040 C0G

SRF1040 C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 40V ITO220AB

0

SRF1020HC0G

SRF1020HC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 20V ITO220AB

0

MBR2550CTHC0G

MBR2550CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 50V TO220AB

0

HERF1606G C0G

HERF1606G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 600V ITO-220AB

0

MBRS15150CT-Y MNG

MBRS15150CT-Y MNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 150V TO263

0

MBR6050PT C0G

MBR6050PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 50V TO247AD

0

MUR1660CT C0G

MUR1660CT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 600V 16A TO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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