Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
TSD20H100CW MNG

TSD20H100CW MNG

TSC (Taiwan Semiconductor)

DIODE, SCHOTTKY, TRENCH, 20A, 10

790

SRS1060HMNG

SRS1060HMNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 60V TO263AB

0

MBR10150CTC0

MBR10150CTC0

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 150V TO220AB

0

MBRF1545CT C0G

MBRF1545CT C0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 45V 15A ITO220AB

5970

TSF30U120C C0G

TSF30U120C C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 120V ITO220AB

0

SRF2060 C0G

SRF2060 C0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 60V 20A ITO220AB

906

HERF1007G C0G

HERF1007G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 800V ITO-220AB

0

TSF30L150C C0G

TSF30L150C C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 150V ITO220AB

581

TSI10L200CW C0G

TSI10L200CW C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 200V I2PAK

4000

HER1007G C0G

HER1007G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 800V 10A TO220AB

0

TSI10H120CW C0G

TSI10H120CW C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 120V I2PAK

950

MBR20H200CT C0G

MBR20H200CT C0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 200V 20A TO220AB

0

TSF10H45C C0G

TSF10H45C C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 45V ITO220AB

891

MBR40200PT C0G

MBR40200PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 200V TO247

0

TSF30U60C C0G

TSF30U60C C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 60V ITO220AB

969

TSI10H100CW C0G

TSI10H100CW C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 100V I2PAK

0

RB495D RFG

RB495D RFG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 25V SOT23

0

HER1008G C0G

HER1008G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 10A TO220AB

0

MBR20200CT C0G

MBR20200CT C0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 200V 20A TO220AB

4279

UG1006G C0G

UG1006G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 400V 10A TO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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