Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SR1620HC0G

SR1620HC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 20V TO220AB

0

MBR1045CT C0G

MBR1045CT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 45V TO220AB

0

SRS2040HMNG

SRS2040HMNG

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 40V 20A TO263AB

0

SR1630HC0G

SR1630HC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 30V TO220AB

0

MBRF2550CTHC0G

MBRF2550CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 50V ITO220AB

0

SRS10150 MNG

SRS10150 MNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 150V TO263

0

MBRF30L45CTHC0G

MBRF30L45CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 45V ITO220AB

0

MBR3090PT C0G

MBR3090PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 90V TO247AD

0

SRS16100 MNG

SRS16100 MNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 100V TO263

0

MBR3045CTHC0G

MBR3045CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 45V TO220AB

0

HER1602G C0G

HER1602G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 100V 16A TO220AB

0

MBR4050PTHC0G

MBR4050PTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 50V TO247AD

0

MBRS2560CTHMNG

MBRS2560CTHMNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 60V TO263AB

0

UGF2008GHC0G

UGF2008GHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 600V ITO-220AB

0

MBR4090PT C0G

MBR4090PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 90V TO247AD

0

MBR3045PTHC0G

MBR3045PTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 45V TO247AD

0

MBR20L100CTHC0G

MBR20L100CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 100V TO220

0

MURF1620CTHC0G

MURF1620CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 200V ITO-220AB

0

GP1005HC0G

GP1005HC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 600V 10A TO220AB

0

MBRF2535CTHC0G

MBRF2535CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 35V ITO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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