Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS21S RFG

BAS21S RFG

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 250V 200MA SOT23

0

UGF1004G C0G

UGF1004G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 200V ITO-220AB

0

TSI20H200CW C0G

TSI20H200CW C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 200V I2PAK

760

MBR20200PT C0G

MBR20200PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 200V TO247

0

MMBD4148CA RFG

MMBD4148CA RFG

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 100V 200MA SOT23

0

BAS40-04 RFG

BAS40-04 RFG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 40V SOT23

0

MBRS2045CTHMNG

MBRS2045CTHMNG

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 45V TO263AB

0

MBR2060PT C0G

MBR2060PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 60V TO247AD

0

SRF2040 C0G

SRF2040 C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 40V ITO220AB

0

TSI10H200CW C0G

TSI10H200CW C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTTKY 200V I2PAK

0

HER3005PT C0G

HER3005PT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 400V 30A TO247AD

0

HERF1008G C0G

HERF1008G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 10A ITO-220AB

0

MBR10100CTC0

MBR10100CTC0

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 100V TO220AB

0

GP1603 C0G

GP1603 C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 16A TO220AB

0

TSF40H120C C0G

TSF40H120C C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 120V ITO220AB

0

TST40L60CW C0G

TST40L60CW C0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 60V 20A TO220AB

1512

HERF1608G C0G

HERF1608G C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 16A ITO-220AB

0

MBRF3045CTHC0G

MBRF3045CTHC0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 45V ITO220AB

0

HERF1008GA C0G

HERF1008GA C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY GP 10A ITO-220AB

0

TSF10U60C C0G

TSF10U60C C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 60V ITO220AB

790

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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