Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STF1045C

STF1045C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V ITO220

989

MBR40200CT

MBR40200CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V TO220

156

60CNQ035

60CNQ035

SMC Diode Solutions

DIODE SCHOTTKY 35V 30A PRM3

0

150CMQ035

150CMQ035

SMC Diode Solutions

150A, 35V, TO-249, POWER MODULES

24

303CMQ080

303CMQ080

SMC Diode Solutions

DIODE SCHOTTKY 80V 150A PRM4

0

SDURB1620CTTR

SDURB1620CTTR

SMC Diode Solutions

DIODE GEN PURP 200V D2PAK

0

61CNQ045SL

61CNQ045SL

SMC Diode Solutions

DIODE SCHOTTKY 45V 30A PRM3-SL

0

81CNQ045

81CNQ045

SMC Diode Solutions

DIODE SCHOTTKY 45V 40A PRM2

40

203DMQ100

203DMQ100

SMC Diode Solutions

200A, 100V, PRM4-ISO, POWER MODU

9

MBR40200WT

MBR40200WT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 200V TO247

163

30CTQ040-1

30CTQ040-1

SMC Diode Solutions

DIODE SCHOTTKY 40V 15A TO262

0

MBR40150WT

MBR40150WT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V TO247

280

25CTQ040

25CTQ040

SMC Diode Solutions

DIODE SCHOTTKY 40V 15A TO220AB

0

SBRF2060CT

SBRF2060CT

SMC Diode Solutions

DIODE SCHOTTKY 60V ITO220AB

0

SDURD1560CTTR

SDURD1560CTTR

SMC Diode Solutions

DIODE ARRAY GEN PURP 600V DPAK

2377

MBR2060CTP

MBR2060CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V TO220AB

740

66CNQ200SL

66CNQ200SL

SMC Diode Solutions

DIODE SCHOTTKY 200V 30A PRM3-SL

0

16CTQ200

16CTQ200

SMC Diode Solutions

DIODE SCHOTTKY 200V 8A TO220AB

0

SDURF3030CTR

SDURF3030CTR

SMC Diode Solutions

DIODE GEN PURP 300V 15A ITO220AB

0

203CNQ080

203CNQ080

SMC Diode Solutions

DIODE SCHOTTKY 80V 100A PRM4

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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