Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRF20100CTL

MBRF20100CTL

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V ITO220

897

MBR3045CTP

MBR3045CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO220AB

1400

63CNQ100SM

63CNQ100SM

SMC Diode Solutions

DIODE SCHOTTKY 100V 30A PRM3-SM

0

SBR10150CT

SBR10150CT

SMC Diode Solutions

DIODE SCHOTTKY 150V TO220AB

0

84CNQ035SMS2

84CNQ035SMS2

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 35V PRM2-SM

0

BAT54S

BAT54S

SMC Diode Solutions

RECTIFIER DIODE

2041333

MBR2080CTL

MBR2080CTL

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 80V TO220AB

973

83CNQ080

83CNQ080

SMC Diode Solutions

DIODE SCHOTTKY 80V 40A PRM2

0

60CNQ045

60CNQ045

SMC Diode Solutions

DIODE SCHOTTKY 45V 30A PRM3

0

224CMQ045

224CMQ045

SMC Diode Solutions

DIODE SCHOTTKY 45V 110A PRM4

0

MBRF1080CTP

MBRF1080CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 80V ITO220

199

SDURF1530CTR

SDURF1530CTR

SMC Diode Solutions

DIODE ARRAY GP 300V ITO220AB

2231

MBR120150WT

MBR120150WT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 150V TO247

5586

SDUR2040WT

SDUR2040WT

SMC Diode Solutions

DIODE ARRAY GP 400V TO247AD

275

MBRD650CTTR

MBRD650CTTR

SMC Diode Solutions

DIODE SCHOTTKY 50V DPAK

0

82CNQ030

82CNQ030

SMC Diode Solutions

DIODE SCHOTTKY 30V 40A PRM2

29

151CMQ040

151CMQ040

SMC Diode Solutions

150A, 40V, TO-249, POWER MODULES

24

SBRF20150CT

SBRF20150CT

SMC Diode Solutions

DIODE SCHOTTKY 150V ITO220AB

0

162CMQ030

162CMQ030

SMC Diode Solutions

160A, 30V, TO-249, POWER MODULES

24

16CTQ080

16CTQ080

SMC Diode Solutions

DIODE SCHOTTKY 80V 8A TO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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