Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
LQA20N200C

LQA20N200C

Power Integrations

DIODE ARRAY GP 200V 10A TO252

2286

LQA10N200C

LQA10N200C

Power Integrations

DIODE ARRAY GP 200V 5A TO252

19127

LXA12T600C

LXA12T600C

Power Integrations

DIODE ARRAY SCHOTTKY 600V TO220

0

LQA10N150C

LQA10N150C

Power Integrations

DIODE CC 150V 5A DUAL TO252

0

LQA40B200C

LQA40B200C

Power Integrations

DIODE ARRAY GP 200V 20A TO263AB

660

LQA30B200C

LQA30B200C

Power Integrations

DIODE ARRAY GP 200V 15A TO263AB

0

LQA30B150C

LQA30B150C

Power Integrations

DIODE CC 150V 15A DUAL TO-263AB

0

LQA12B300C

LQA12B300C

Power Integrations

DIODE ARRAY SCHOTTKY 300V TO263

0

LQA20T300C

LQA20T300C

Power Integrations

DIODE ARRAY SCHOTTKY 300V TO220

71

LQA40B150C

LQA40B150C

Power Integrations

DIODE CC 150V 20A DUAL TO-263AB

0

LQA20T200C

LQA20T200C

Power Integrations

DIODE ARRAY GP 200V 10A TO220AB

335

LQA32T300C

LQA32T300C

Power Integrations

DIODE ARRAY SCHOTTKY 300V TO220

0

LQA20T150C

LQA20T150C

Power Integrations

DIODE CC 150V 10A DUAL TO-220AB

0

LQA30T200C

LQA30T200C

Power Integrations

DIODE ARRAY GP 200V 15A TO220AB

0

LQA40T150C

LQA40T150C

Power Integrations

DIODE CC 150V 20A DUAL TO-220AB

0

LXA16T600C

LXA16T600C

Power Integrations

DIODE ARRAY SCHOTTKY 600V TO220

350

LQA12T300C

LQA12T300C

Power Integrations

DIODE ARRAY GP 300V 6A TO220AB

0

LQA30A300C

LQA30A300C

Power Integrations

DIODE ARRAY SCHOTTKY 300V TO247

299

LQA60A300C

LQA60A300C

Power Integrations

DIODE ARRAY SCHOTTKY 300V TO247

23

LQA20B300C

LQA20B300C

Power Integrations

DIODE RECT GP 300V 10A TO263

311

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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