Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FFP04U40DNTU

FFP04U40DNTU

RECTIFIER DIODE

800

BAS56,215

BAS56,215

Nexperia

DIODE ARRAY GP 60V 200MA SOT143B

14829

MAS3132EGL

MAS3132EGL

Panasonic

DIODE ARRAY 80V 100MA SSSMINI3

19646

BAV70HDW-7

BAV70HDW-7

Zetex Semiconductors (Diodes Inc.)

DIODE ARRAY GP 100V 125MA SOT363

1765174000

FMU-14S

FMU-14S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 5A TO220F

260

V60DM120CHM3/I

V60DM120CHM3/I

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 120V 30A TO263AC

0

MBRD630CTTR

MBRD630CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 30V DPAK

526

MBR4045PT-E3/45

MBR4045PT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 45V TO3P

9

1SS181-TP

1SS181-TP

Micro Commercial Components (MCC)

DIODE ARRAY GP 80V 100MA SOT23

0

BYVF32-100-E3/45

BYVF32-100-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 100V 18A ITO220AB

0

RBR10NS40AFHTL

RBR10NS40AFHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VR 10A

1910

1SS384TE85LF

1SS384TE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY SCHOTTKY 10V USQ

20077

MBR2060CTL

MBR2060CTL

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V TO220AB

1974

FMX-4203S

FMX-4203S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 20A TO3PF

485

MBRF10H100CT-E3/45

MBRF10H100CT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 100V ITO220

0

TSD20H120CW MNG

TSD20H120CW MNG

TSC (Taiwan Semiconductor)

DIODE, SCHOTTKY, TRENCH, 20A, 12

778

DSA30C200PC-TUB

DSA30C200PC-TUB

Wickmann / Littelfuse

POWER DIODE DISCRETES-SCHOTTKY T

0

STTH60AC06CP

STTH60AC06CP

STMicroelectronics

DIODE ARRAY GP 600V 30A TO3P

0

STPS41L60CT

STPS41L60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

680

SBR30A60CT-G

SBR30A60CT-G

Zetex Semiconductors (Diodes Inc.)

DIODE SB 60V TO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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