Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS7006WH6327XTSA1

BAS7006WH6327XTSA1

IR (Infineon Technologies)

DIODE ARRAY SCHOTTKY 70V SOT323

29845

BYT28B-300-E3/81

BYT28B-300-E3/81

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 300V 5A TO263AB

0

EMP11T2R

EMP11T2R

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD6

5813

RB215T-40NZC9

RB215T-40NZC9

ROHM Semiconductor

RB085T-40NZ IS LOW IR

990

VI40120C-M3/4W

VI40120C-M3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 40A 100V TO-262AA

0

WNS20S100CQ

WNS20S100CQ

WeEn Semiconductors Co., Ltd

DIODE ARRAY SCHOTTKY 100V TO220E

5000

1PS70SB85,115

1PS70SB85,115

Nexperia

DIODE ARRAY SCHOTTKY 15V SOT323

2632

STPS40M120CR

STPS40M120CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V I2PAK

0

MBR40L45CTG

MBR40L45CTG

Sanyo Semiconductor/ON Semiconductor

DIODE ARRAY SCHOTTKY 45V TO220AB

6

BAV70WT1

BAV70WT1

RECTIFIER DIODE

240000

DSEP29-06AS-TUB

DSEP29-06AS-TUB

Wickmann / Littelfuse

DIODE ARRAY

0

VS-MBRB2080CT-M3

VS-MBRB2080CT-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 80V 10A D2PAK

0

BAS70-04W,115

BAS70-04W,115

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT323

156221

RB715WMFHTL

RB715WMFHTL

ROHM Semiconductor

AUTOMOTIVE SCHOTTKY BARRIER DIOD

2853

NSVBAS21HT1

NSVBAS21HT1

DIODE GEN PURP 250V 200MA SOD323

75000

CDBD20150-HF

CDBD20150-HF

Comchip Technology

DIODE ARRAY SCHOTTKY 150V D2PAK

0

RB088NS-60TL

RB088NS-60TL

ROHM Semiconductor

SUPER LOW IR, 60V, 10A, TO-263S

1000

DCA010-TB-E

DCA010-TB-E

RECTIFIER DIODE

14962

MBRF20L100CT C0G

MBRF20L100CT C0G

TSC (Taiwan Semiconductor)

DIODE ARRAY SCHOTT 100V ITO220AB

0

DSTF3060C

DSTF3060C

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 60V TO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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