Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS21VD,165

BAS21VD,165

Nexperia

DIODE ARRAY GP 200V 200MA 6TSOP

0

HN1D02F(TE85L,F)

HN1D02F(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE ARRAY GP 80V 100MA SM6

559

FEPB16CT-E3/45

FEPB16CT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 150V 8A TO263AB

0

MBRT60040R

MBRT60040R

GeneSiC Semiconductor

DIODE MODULE 40V 600A 3TOWER

0

RBR20BGE30ATL

RBR20BGE30ATL

ROHM Semiconductor

30V, 20A, TO-252, CATHODE COMMON

0

CDST-70-G

CDST-70-G

Comchip Technology

DIODE ARRAY GP 70V 200MA SOT23

0

VBT3045C-E3/8W

VBT3045C-E3/8W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 30A 45V TO-263AB

0

BAS40TW-TP

BAS40TW-TP

Micro Commercial Components (MCC)

DIODE ARRAY SCHOTTKY 40V SOT363

247247

DSSK48-0025B

DSSK48-0025B

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 25V TO220AB

0

MBRF2050CT

MBRF2050CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 50V ITO220

982

BAW56E6433

BAW56E6433

IR (Infineon Technologies)

HIGH SPEED SWITCHING DIODE

120000

MDD44-18N1B

MDD44-18N1B

Wickmann / Littelfuse

DIODE MODULE 1.8KV 64A TO240AA

0

MBR20100FCT-BP

MBR20100FCT-BP

Micro Commercial Components (MCC)

DIODE SCHOTTKY 100V 20A ITO220AB

0

MDA72-08N1B

MDA72-08N1B

Wickmann / Littelfuse

DIODE MODULE 800V 113A TO240AA

36

408CNQ060

408CNQ060

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 60V PRM4

9

MURTA50060

MURTA50060

GeneSiC Semiconductor

DIODE MODULE 600V 500A 3TOWER

0

BYQ28EB-150HE3/81

BYQ28EB-150HE3/81

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 150V 5A TO263AB

0

SDUR60P60WT

SDUR60P60WT

SMC Diode Solutions

DIODE ARRAY GP 600V 30A TO247AD

680

STF20120C

STF20120C

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 120V ITO220

1000

VS-40CTQ150STRL-M3

VS-40CTQ150STRL-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 150V 20A D2PAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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