Diodes - Bridge Rectifiers

Image	Part Number	Description / PDF	Quantity	Rfq
	KBU1002 GeneSiC Semiconductor	BRIDGE RECT 1PHASE 200V 10A KBU	0
	DB101G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 50V 1A DB	0
	GBPC1502T GeneSiC Semiconductor	BRIDGE RECT 1PHASE 200V 15A GBPC	0
	KBL606G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 600V 6A KBL	0
	DB153G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 200V 1.5A DB	0
	KBU1010 GeneSiC Semiconductor	BRIDGE RECT 1PHASE 1KV 10A KBU	0
	KBU1004 GeneSiC Semiconductor	BRIDGE RECT 1PHASE 400V 10A KBU	0
	GBU15J GeneSiC Semiconductor	BRIDGE RECT 1PHASE 600V 15A GBU	0
	GBU10A GeneSiC Semiconductor	BRIDGE RECT 1PHASE 50V 10A GBU	0
	GBPC5010T GeneSiC Semiconductor	BRIDGE RECT 1PHASE 1KV 50A GBPC	0
	GBPC2501T GeneSiC Semiconductor	BRIDGE RECT 1PHASE 100V 25A GBPC	0
	GBPC25005T GeneSiC Semiconductor	BRIDGE RECT 1PHASE 50V 25A GBPC	0
	GBPC3506T GeneSiC Semiconductor	BRIDGE RECT 1PHASE 600V 35A GBPC	0
	KBL608G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 800V 6A KBL	0
	GBPC1501T GeneSiC Semiconductor	BRIDGE RECT 1PHASE 100V 15A GBPC	0
	KBL406G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 600V 4A KBL	0
	GBU10G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 400V 10A GBU	0
	DB152G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 100V 1.5A DB	0
	KBL404G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 400V 4A KBL	0
	DB154G GeneSiC Semiconductor	BRIDGE RECT 1PHASE 400V 1.5A DB	0

Diodes - Bridge Rectifiers

1. Overview

Bridge rectifiers are discrete semiconductor devices that convert alternating current (AC) to direct current (DC) using a bridge configuration of four or more diodes. They are fundamental components in power supply circuits, enabling efficient energy conversion in electronic systems. Their importance lies in providing reliable rectification for applications ranging from consumer electronics to industrial machinery, ensuring compatibility between AC power sources and DC-powered devices.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Single-Phase Full-Wave Bridge	Rectifies both AC half-cycles, low ripple output	Switching power supplies, battery chargers
Three-Phase Bridge Rectifier	Handles three-phase AC inputs, higher efficiency	Industrial motor drives, renewable energy inverters
High-Voltage Bridge	Rated for >1000V reverse voltage	Electric vehicle charging stations, HVDC systems
Bridge Rectifier Module	Integrated heat sink, multi-pin package	High-power audio amplifiers, welding equipment

3. Structure and Components

A standard bridge rectifier consists of 4 diodes arranged in a closed-loop "bridge" configuration. The diodes are typically silicon-based PN-junction or Schottky barrier structures. The package uses epoxy resin encapsulation with metal terminals for AC/DC connections. Advanced designs incorporate:

Thermal vias for heat dissipation
Gold-aluminum wire bonds for conductivity
Integrated snubber circuits for voltage spike suppression

4. Key Technical Specifications

Parameter	Description	Importance
Max Average Rectified Current (IO)	Maximum continuous DC current rating	Determines power handling capability
Reverse Peak Voltage (VRRM)	Maximum allowable reverse voltage	Prevents breakdown under AC peak voltages
Forward Voltage Drop (VF)	Voltage loss during conduction	Impacts efficiency and thermal design
Operating Temperature Range	Valid temperature range for functionality	Affects reliability in extreme environments
Reverse Recovery Time (trr)	Time to switch from conduction to blocking	Critical for high-frequency applications

5. Application Fields

Power Electronics: AC-DC converters in PCs/servers
Automotive: Alternator rectification in combustion engines
Renewables: Solar inverter input stage
Consumer: LED driver circuits in TVs
Industrial: CNC machine tool power supplies

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
ON Semiconductor	MB10F Series	1A average current, 600V VRRM, high surge capability
STMicroelectronics	DBL60V120SG	Three-phase 600V, integrated TVS protection
Vishay Intertechnology	KBU8M	800V rating, 8A average current, compact package
Diodes Inc.	GBU606	600V, 6A, low leakage current

7. Selection Recommendations

Consider the following factors during component selection:

Calculate required IO with 20% safety margin
Select VRRM >1.5 expected AC peak voltage
Choose low VF devices for >85% efficiency
Match package thermal characteristics to cooling solution
For high-frequency use, prioritize trr <50ns

8. Industry Trends

Future development focuses on:

Wide bandgap (SiC/GaN) bridges for 98%+ efficiency
3D-printed heat spreader integration
Smart rectifiers with built-in current sensing
Automotive-grade modules for 800V EV systems
Lead-free packaging meeting RoHS 3.0 standards

Market growth driven by renewable energy systems and electric vehicle adoption, projected at 6.2% CAGR through 2030 (Source: Yole D veloppement).