Diodes - Bridge Rectifiers

Part Number	Description / PDF	Quantity
CBR1-D010 PBFREE Central Semiconductor	BRIDGE RECT 1PHASE 100V 1A 4DIP	254600
DF04S-E3/45 Vishay General Semiconductor – Diodes Division	BRIDGE RECT 1PHASE 400V 1A DFS	82
GBPC3508 Sanyo Semiconductor/ON Semiconductor	BRIDGE RECT 1PHASE 800V 35A GBPC	488
DBL201G C1G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 50V 2A DBL	0
BU2008-M3/51 Vishay General Semiconductor – Diodes Division	BRIDGE RECT 1P 800V 20A BU	0
RS1002MLS Rectron USA	BRDGE RCT GLASS 100V 10A RS10MLS	0
SBS26 RGG TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 60V 2A ABS	0
GBU407 D2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 1KV 4A GBU	2593
B6S-G Comchip Technology	BRIDGE RECT 1P 600V 800MA MBS	12413
GBJ2510-G Comchip Technology	BRIDGE RECT 1PHASE 1KV 25A GBJ	0
MP1505W Rectron USA	BRIDGE RECT GLASS 50V 15A MP-15W	0
DBLS206G C1G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 800V 2A DBLS	0
W02L Rectron USA	BRIDGE RECT GLASS 200V 1.5A RC-2	0
GBU410-B1-0000	RECT BRIDGE 1000V 4A GBU	0
UG3KB60GTB SMC Diode Solutions	BRIDGE RECT 1PHASE 600V 3A D3K	825
DBL155G C1G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 600V 1.5A DBL	0
SBS24 REG TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 40V 2A ABS	0
TBS20J-TP Micro Commercial Components (MCC)	BRIDGE RECT 1PHASE 600V 2A 4TBS	0
MP1010G-G Comchip Technology	BRIDGE RECT 1PHASE 1KV 10A MP8	2565600
GBU2501-G Comchip Technology	BRIDGE RECT 1PHASE 100V 4.2A GBU	0

Diodes - Bridge Rectifiers

1. Overview

Bridge rectifiers are discrete semiconductor devices that convert alternating current (AC) to direct current (DC) using a bridge configuration of four or more diodes. They are fundamental components in power supply circuits, enabling efficient energy conversion in electronic systems. Their importance lies in providing reliable rectification for applications ranging from consumer electronics to industrial machinery, ensuring compatibility between AC power sources and DC-powered devices.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Single-Phase Full-Wave Bridge	Rectifies both AC half-cycles, low ripple output	Switching power supplies, battery chargers
Three-Phase Bridge Rectifier	Handles three-phase AC inputs, higher efficiency	Industrial motor drives, renewable energy inverters
High-Voltage Bridge	Rated for >1000V reverse voltage	Electric vehicle charging stations, HVDC systems
Bridge Rectifier Module	Integrated heat sink, multi-pin package	High-power audio amplifiers, welding equipment

3. Structure and Components

A standard bridge rectifier consists of 4 diodes arranged in a closed-loop "bridge" configuration. The diodes are typically silicon-based PN-junction or Schottky barrier structures. The package uses epoxy resin encapsulation with metal terminals for AC/DC connections. Advanced designs incorporate:

Thermal vias for heat dissipation
Gold-aluminum wire bonds for conductivity
Integrated snubber circuits for voltage spike suppression

4. Key Technical Specifications

Parameter	Description	Importance
Max Average Rectified Current (IO)	Maximum continuous DC current rating	Determines power handling capability
Reverse Peak Voltage (VRRM)	Maximum allowable reverse voltage	Prevents breakdown under AC peak voltages
Forward Voltage Drop (VF)	Voltage loss during conduction	Impacts efficiency and thermal design
Operating Temperature Range	Valid temperature range for functionality	Affects reliability in extreme environments
Reverse Recovery Time (trr)	Time to switch from conduction to blocking	Critical for high-frequency applications

5. Application Fields

Power Electronics: AC-DC converters in PCs/servers
Automotive: Alternator rectification in combustion engines
Renewables: Solar inverter input stage
Consumer: LED driver circuits in TVs
Industrial: CNC machine tool power supplies

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
ON Semiconductor	MB10F Series	1A average current, 600V VRRM, high surge capability
STMicroelectronics	DBL60V120SG	Three-phase 600V, integrated TVS protection
Vishay Intertechnology	KBU8M	800V rating, 8A average current, compact package
Diodes Inc.	GBU606	600V, 6A, low leakage current

7. Selection Recommendations

Consider the following factors during component selection:

Calculate required IO with 20% safety margin
Select VRRM >1.5 expected AC peak voltage
Choose low VF devices for >85% efficiency
Match package thermal characteristics to cooling solution
For high-frequency use, prioritize trr <50ns

8. Industry Trends

Future development focuses on:

Wide bandgap (SiC/GaN) bridges for 98%+ efficiency
3D-printed heat spreader integration
Smart rectifiers with built-in current sensing
Automotive-grade modules for 800V EV systems
Lead-free packaging meeting RoHS 3.0 standards

Market growth driven by renewable energy systems and electric vehicle adoption, projected at 6.2% CAGR through 2030 (Source: Yole D veloppement).