TVS - Thyristors

Image Part Number Description / PDF Quantity Rfq
TSMBJ1010C

TSMBJ1010C

Micro Commercial Components (MCC)

THYRISTOR 140V 400A DO214AA

0

TSMBJ0305C-064

TSMBJ0305C-064

Micro Commercial Components (MCC)

THYRISTOR 58V 150A DO214AA

0

TSMBJ1006C

TSMBJ1006C

Micro Commercial Components (MCC)

THYRISTOR 75V 400A DO214AA

0

TSMBJ1024C

TSMBJ1024C

Micro Commercial Components (MCC)

THYRISTOR 320V 400A DO214AA

0

TSMBJ0324C

TSMBJ0324C

Micro Commercial Components (MCC)

THYRISTOR 320V 150A DO214AA

0

TSMBJ1012C

TSMBJ1012C

Micro Commercial Components (MCC)

THYRISTOR 160V 400A DO214AA

0

TSMBJ0318C

TSMBJ0318C

Micro Commercial Components (MCC)

THYRISTOR 220V 150A DO214AA

0

TSMBJ0522C

TSMBJ0522C

Micro Commercial Components (MCC)

THYRISTOR 275V 250A DO214AA

0

TSMBJ0305C-072

TSMBJ0305C-072

Micro Commercial Components (MCC)

THYRISTOR 65V 150A DO214AA

0

TSMBJ0316C

TSMBJ0316C

Micro Commercial Components (MCC)

THYRISTOR 190V 150A DO214AA

0

TSMBJ1005C-072

TSMBJ1005C-072

Micro Commercial Components (MCC)

THYRISTOR 65V 400A DO214AA

0

TSMBJ1022C

TSMBJ1022C

Micro Commercial Components (MCC)

THYRISTOR 275V 400A DO214AA

0

TSMBJ0309C-130

TSMBJ0309C-130

Micro Commercial Components (MCC)

THYRISTOR 120V 150A DO214AA

0

TVS - Thyristors

1. Overview

Transient Voltage Suppression (TVS) diodes and Thyristors are critical components in circuit protection systems. TVS diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by electrostatic discharge (ESD), inductive load switching, or lightning strikes. Thyristors, a family of semiconductor devices including Silicon-Controlled Rectifiers (SCRs) and Triacs, are used for high-power switching and overvoltage protection. Both technologies are essential in modern electronics, ensuring reliability in applications ranging from consumer devices to industrial machinery.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSProtects against single-polarity transientsPower supplies, DC circuits
Bidirectional TVSClamps positive/negative transients simultaneouslyAC lines, communication interfaces
Silicon-Controlled Rectifier (SCR)Latching behavior for overvoltage crowbar protectionPower converters, motor drives
TriacAC current control and bidirectional switchingLighting control, HVAC systems

3. Structure and Composition

TVS diodes typically use a heavily doped PN junction structure with a large cross-sectional area to absorb transient energy. They are encapsulated in plastic packages (e.g., DO-214) with two terminals. Thyristors feature a four-layer PNPN structure with three terminals (anode, cathode, gate). Advanced models incorporate passivation layers and metal-over-glass packaging for thermal stability. Both devices use semiconductor materials like silicon, with doping profiles optimized for specific breakdown voltages.

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage causing conductionMatches protection level to circuit requirements
Clamping Voltage (Vc)Voltage across device during conductionDetermines stress on protected components
Response TimeTime to transition from off to on stateCritical for protecting against fast transients
Surge Current Rating (Ipp)Maximum allowable transient currentEnsures survival under worst-case scenarios
Holding Current (Ih)Thyristor-specific: Maintains conduction stateAffects reset behavior in crowbar circuits

5. Application Fields

Key industries include:

  • Telecommunications: Ethernet transceivers, fiber optic modules
  • Industrial Automation: PLCs, motor drives
  • Consumer Electronics: Smartphones, power adapters
  • Automotive: CAN bus protection, alternator circuits
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
LittelfuseSM8S Series TVS8kV ESD protection, low leakage current
STMicroelectronicsSTRIP Series ThyristorsIntegrated protection for AC loads
VishayTPSMB Series Bidirectional TVSAEC-Q101 qualified for automotive use
ON SemiconductorNUD3160 SCRIntegrated gate drive for crowbar circuits

7. Selection Guidelines

Key considerations:

  1. Match breakdown voltage to system operating voltage (typically 10-15% higher)
  2. Ensure clamping voltage is below the maximum rating of protected ICs
  3. Select surge current capacity based on expected fault conditions
  4. For thyristors: Evaluate holding current vs. load characteristics
  5. Consider packaging (SMD vs. through-hole) for PCB integration

Example: For a 12V automotive circuit, a bidirectional TVS with 18V breakdown voltage and 40A surge rating would protect against load dump transients while surviving ISO 7637 test pulses.

8. Industry Trends

Emerging trends include:

  • Integration of TVS and EMI filtering in single packages
  • Wide bandgap materials (SiC/GaN) enabling higher temperature operation
  • Smart thyristors with integrated diagnostics for predictive maintenance
  • Miniaturization driven by 5G infrastructure and IoT device demands
  • Rail-to-rail protection architectures in high-speed data lines
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