TVS - Thyristors

Image Part Number Description / PDF Quantity Rfq
TISP4290F3DR-S

TISP4290F3DR-S

J.W. Miller / Bourns

THYRISTOR 220V 120A 8SOIC

0

TISP4380F3DR-S

TISP4380F3DR-S

J.W. Miller / Bourns

THYRISTOR 270V 120A 8SOIC

0

TISP4200H3BJR-S

TISP4200H3BJR-S

J.W. Miller / Bourns

THYRISTOR 155V 300A DO214AA

0

TISP4A270H3BJR-S

TISP4A270H3BJR-S

J.W. Miller / Bourns

THYRISTOR 160V 100A DO214AA

0

TISP7072F3DR-S

TISP7072F3DR-S

J.W. Miller / Bourns

THYRISTOR 58V 80A 8SOIC

0

TISP4250H3BJR-S

TISP4250H3BJR-S

J.W. Miller / Bourns

THYRISTOR 190V 300A DO214AA

3000

TISP4165H3BJR-S

TISP4165H3BJR-S

J.W. Miller / Bourns

THYRISTOR 135V 300A DO214AA

0

TISP4C125H3BJR-S

TISP4C125H3BJR-S

J.W. Miller / Bourns

THYRISTOR 100V 100A DO214AA

0

TISP4070M3AJR-S

TISP4070M3AJR-S

J.W. Miller / Bourns

THYRISTOR 58V 220A DO214AC

0

TISP4240M3AJR-S

TISP4240M3AJR-S

J.W. Miller / Bourns

THYRISTOR 180V 220A DO214AC

0

TISP4072F3DR-S

TISP4072F3DR-S

J.W. Miller / Bourns

THYRISTOR 58V 120A 8SOIC

0

TISP4145M3AJR-S

TISP4145M3AJR-S

J.W. Miller / Bourns

THYRISTOR 120V 220A DO214AC

0

TISP4P020L1NR-S

TISP4P020L1NR-S

J.W. Miller / Bourns

THYRISTOR 12V 30A SC74A

9364

TISP4200M3BJR-S

TISP4200M3BJR-S

J.W. Miller / Bourns

THYRISTOR 155V 220A DO214AA

0

TISP4115M3BJR-S

TISP4115M3BJR-S

J.W. Miller / Bourns

THYRISTOR 90V 220A DO214AA

0

TISP61089MDR-S

TISP61089MDR-S

J.W. Miller / Bourns

THYRISTOR 170V 30A 8SOIC

0

TISP61089ADR-S

TISP61089ADR-S

J.W. Miller / Bourns

THYRISTOR 120V 30A 8SOIC

10000

TISP4165M3AJR-S

TISP4165M3AJR-S

J.W. Miller / Bourns

THYRISTOR 135V 220A DO214AC

0

TISP4220H3BJR-S

TISP4220H3BJR-S

J.W. Miller / Bourns

THYRISTOR 160V 300A DO214AA

1794

TISP7260F3DR-S

TISP7260F3DR-S

J.W. Miller / Bourns

THYRISTOR 200V 175A 8SOIC

0

TVS - Thyristors

1. Overview

Transient Voltage Suppression (TVS) diodes and Thyristors are critical components in circuit protection systems. TVS diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by electrostatic discharge (ESD), inductive load switching, or lightning strikes. Thyristors, a family of semiconductor devices including Silicon-Controlled Rectifiers (SCRs) and Triacs, are used for high-power switching and overvoltage protection. Both technologies are essential in modern electronics, ensuring reliability in applications ranging from consumer devices to industrial machinery.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSProtects against single-polarity transientsPower supplies, DC circuits
Bidirectional TVSClamps positive/negative transients simultaneouslyAC lines, communication interfaces
Silicon-Controlled Rectifier (SCR)Latching behavior for overvoltage crowbar protectionPower converters, motor drives
TriacAC current control and bidirectional switchingLighting control, HVAC systems

3. Structure and Composition

TVS diodes typically use a heavily doped PN junction structure with a large cross-sectional area to absorb transient energy. They are encapsulated in plastic packages (e.g., DO-214) with two terminals. Thyristors feature a four-layer PNPN structure with three terminals (anode, cathode, gate). Advanced models incorporate passivation layers and metal-over-glass packaging for thermal stability. Both devices use semiconductor materials like silicon, with doping profiles optimized for specific breakdown voltages.

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage causing conductionMatches protection level to circuit requirements
Clamping Voltage (Vc)Voltage across device during conductionDetermines stress on protected components
Response TimeTime to transition from off to on stateCritical for protecting against fast transients
Surge Current Rating (Ipp)Maximum allowable transient currentEnsures survival under worst-case scenarios
Holding Current (Ih)Thyristor-specific: Maintains conduction stateAffects reset behavior in crowbar circuits

5. Application Fields

Key industries include:

  • Telecommunications: Ethernet transceivers, fiber optic modules
  • Industrial Automation: PLCs, motor drives
  • Consumer Electronics: Smartphones, power adapters
  • Automotive: CAN bus protection, alternator circuits
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
LittelfuseSM8S Series TVS8kV ESD protection, low leakage current
STMicroelectronicsSTRIP Series ThyristorsIntegrated protection for AC loads
VishayTPSMB Series Bidirectional TVSAEC-Q101 qualified for automotive use
ON SemiconductorNUD3160 SCRIntegrated gate drive for crowbar circuits

7. Selection Guidelines

Key considerations:

  1. Match breakdown voltage to system operating voltage (typically 10-15% higher)
  2. Ensure clamping voltage is below the maximum rating of protected ICs
  3. Select surge current capacity based on expected fault conditions
  4. For thyristors: Evaluate holding current vs. load characteristics
  5. Consider packaging (SMD vs. through-hole) for PCB integration

Example: For a 12V automotive circuit, a bidirectional TVS with 18V breakdown voltage and 40A surge rating would protect against load dump transients while surviving ISO 7637 test pulses.

8. Industry Trends

Emerging trends include:

  • Integration of TVS and EMI filtering in single packages
  • Wide bandgap materials (SiC/GaN) enabling higher temperature operation
  • Smart thyristors with integrated diagnostics for predictive maintenance
  • Miniaturization driven by 5G infrastructure and IoT device demands
  • Rail-to-rail protection architectures in high-speed data lines
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