TVS - Mixed Technology

Part Number	Description / PDF	Quantity
NCP347MTAETBG Sanyo Semiconductor/ON Semiconductor	IC OVERVOLTAGE PROT CTRLR 10WDFN	0
NCP360MUTBG Sanyo Semiconductor/ON Semiconductor	IC CTLR USB POS OVP FET 6-UDFN	881
NCP360SNAET1G Sanyo Semiconductor/ON Semiconductor	IC CTLR USB POS OVP FET 5TSOP	252
FR014H5JZ Sanyo Semiconductor/ON Semiconductor	HI SIDE REV BIAS PROTECT 30V MLP	390
NIV1161MTTAG Sanyo Semiconductor/ON Semiconductor	IC ESD PROTECT AUTO DATA 6WDFN	0
NCP347MTAFTBG Sanyo Semiconductor/ON Semiconductor	IC OVERVOLTAGE PROT CTLR 10WDFN	9
NCP3712ASNT1G Sanyo Semiconductor/ON Semiconductor	IC SWITCH OVP HIGH SIDE SC74-6	167057000
NCP360SNT1G Sanyo Semiconductor/ON Semiconductor	IC CTLR USB POS OVP FET 5TSOP	0
NUP8011MUTAG Sanyo Semiconductor/ON Semiconductor	IC TVS ARRAY LO CAP ESD 8-UDFN	242745000
NCP361SNT1G Sanyo Semiconductor/ON Semiconductor	IC USB POS OVP/OCP 5TSOP	0
NCP361MUTBG Sanyo Semiconductor/ON Semiconductor	IC USB OVERVOLT PROT CTRLR 6UDFN	0
FR015L3EZ Sanyo Semiconductor/ON Semiconductor	LOW SIDE REV BIAS POLAR PROTECT	0
NIV1161MTWTAG Sanyo Semiconductor/ON Semiconductor	LOW CAPACITANCE ESD PROTECTION W	0
NIV1241MTWTAG Sanyo Semiconductor/ON Semiconductor	24V LOW CAPACITANCE ESD PROTECTI	0
MC3423P1G Sanyo Semiconductor/ON Semiconductor	IC SENSOR UNDERVOLTAGE 8DIP	0
MC3423DR2G Sanyo Semiconductor/ON Semiconductor	IC SENSOR UNDERVOLTAGE 8-SOIC	0
NCP3712ASNT3 Sanyo Semiconductor/ON Semiconductor	IC SWITCH OVP HIGH SIDE SC74-6	0
NUS3045MNT1 Sanyo Semiconductor/ON Semiconductor	IC OVP W/30V P-CH MOSFET DFN8	0
NCP348MTTXG Sanyo Semiconductor/ON Semiconductor	IC MOSFET DRIVER DUAL 12V 10WDFN	0
MC3423DG Sanyo Semiconductor/ON Semiconductor	IC SENSOR UNDERVOLTAGE 8SOIC	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials