TVS - Mixed Technology

Image Part Number Description / PDF Quantity Rfq
V2F105C150Y1FDP

V2F105C150Y1FDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 5.6V 0805

1648

V2F105A150Y2ERP

V2F105A150Y2ERP

Elco (AVX)

VARISTOR CAP FEEDTHRU 5.6V 0805

120004000

V2F118A400Y2EDP

V2F118A400Y2EDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 18V 0805

10517

V2F118X500Y3DDP

V2F118X500Y3DDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 50V 0805

2000

V2F114A300Y2EDP

V2F114A300Y2EDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 14V 0805

13000

V2F105A150Y2EDP

V2F105A150Y2EDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 5.6V 0805

500

V2F118C400Y1FDP

V2F118C400Y1FDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 18V 0805

753

V2F114C300Y1FDP

V2F114C300Y1FDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 14V 0805

0

V2F118X500Y3DRP

V2F118X500Y3DRP

Elco (AVX)

VARISTOR CAP FEEDTHRU 50V 0805

0

V2F105C150Y1FRP

V2F105C150Y1FRP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F114C300Y1FTP

V2F114C300Y1FTP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F114C300Y1FRP

V2F114C300Y1FRP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F118A400Y2ETP

V2F118A400Y2ETP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F118C400Y1FRP

V2F118C400Y1FRP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F118C400Y1FTP

V2F118C400Y1FTP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F118A400Y2ERP

V2F118A400Y2ERP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F114A300Y2ERP

V2F114A300Y2ERP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F126C600Y2ERP

V2F126C600Y2ERP

Elco (AVX)

VARISTOR CAP FEEDTHRU

0

V2F105A150Y2ETP

V2F105A150Y2ETP

Elco (AVX)

VARISTOR CAP FEEDTHRU 5.6V 0805

0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Silicon-Polymer Hybrid TVSCombines fast silicon diode response with polymer self-recovery capabilityUSB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVSStacked silicon layers for multi-stage voltage clampingIndustrial power supplies, 5G base stations
Glass-Passivated Hybrid TVSHermetic glass encapsulation with integrated RC filteringAutomotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

  • Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
  • Passivation layer: Borosilicate glass or polymer composite
  • Electrode system: Multi-fingered aluminum-copper hybrid metallization
  • Thermal management: Embedded graphite heat spreader
  • Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

ParameterImportance
Breakdown Voltage (Vbr)Determines protection threshold for normal operation
Clamping Voltage (Vc)Defines maximum voltage transmitted to protected circuit
Response Time (tr)Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)Indicates energy absorption capability during transients
Capacitance (Cj)Critical for high-speed signal integrity preservation
Operating TemperatureDefines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

  • Telecommunications: 5G NR base stations, optical transceivers
  • Industrial Automation: PLC systems, motor drives
  • Automotive Electronics: CAN-FD interfaces, LiDAR systems
  • Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
LittelfuseSMxxxHCA Series40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronicsTVSH SeriesAutomotive qualified, AEC-Q101 certified, 300W peak power
BournsPGB1 SeriesMulti-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

  • Match breakdown voltage to system operating voltage (typically 10-15% margin)
  • Verify clamping voltage compatibility with protected IC's maximum ratings
  • Consider parasitic capacitance for high-speed (>1Gbps) applications
  • Evaluate thermal derating curves for intended operating environment
  • Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
  • Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

  • Integration of AI-based predictive protection algorithms
  • Development of 3D-printed nanocomposite TVS structures
  • Adoption of wafer-level packaging for 0.1pF capacitance levels
  • Implementation of energy recovery features in hybrid architectures
  • Advancements in terahertz transient suppression materials
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