TVS - Mixed Technology

Image	Part Number	Description / PDF	Quantity	Rfq
	B1201UARP Wickmann / Littelfuse	BATTRAX PROTECT DUAL 150A MS-013	0
	B3204UATP Wickmann / Littelfuse	BATTRAX DUAL POS/NEG 150A MS-013	0
	B72587H3200K51 TDK EPCOS	VARISTOR 33V 800A RADIAL	0
	SUS6160MNTWG Sanyo Semiconductor/ON Semiconductor	OVP IC WITH INTEGRATED MO	0
	B3204UCRP Wickmann / Littelfuse	BATTRAX PROTECT DUAL 400A MS-013	0
	B3104UATP Wickmann / Littelfuse	BATTRAX DUAL POS/NEG 150A MS-013	0
	B1101UATP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 150A MS013	0
	XUS6160MNTWG Sanyo Semiconductor/ON Semiconductor	OVP IC W/ INTEGRATED FET	0
	PSR-29154 Wickmann / Littelfuse	POLYZEN	0
	P0721UCRP Wickmann / Littelfuse	SIDAC UNI SYM 4CH 65V 500A MS013	0
	B3104UCTP Wickmann / Littelfuse	BATTRAX DUAL POS/NEG 400A MS-013	0
	PGD025S030CSA01 Wickmann / Littelfuse	SUPPRESSOR ESD ARRAY 25PIN DSUB	0
	B1161UCTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 400A MS013	0
	B1101UCTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 400A MS013	0
	PGD015S030BSR01 Wickmann / Littelfuse	SUPPRESSOR ESD ARRAY 15PIN DSUB	0
	B1201UCTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 400A MS013	0
	B72587H3140S251 TDK EPCOS	VARISTOR 22V 800A RADIAL	0
	8102610000 Weidmuller	OVP PU1 C 230/350 VAC	0
	8021510000 Weidmuller	OVP PU3 CR 230/350 VAC	0
	PGD015S030BSA01 Wickmann / Littelfuse	SUPPRESSOR ESD ARRAY 15PIN DSUB	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials