TVS - Diodes

Image	Part Number	Description / PDF	Quantity	Rfq
	SMCJ150 Meritek	TVS DIODE 150V 268V DO-214AB (SM	0
	SMCJ190A Meritek	TVS DIODE 190V 307.8V DO-214AB (	0
	SMDJ11C Meritek	TVS DIODE 11V 20.1V DO-214AB (SM	0
	SMBJ33C Meritek	TVS DIODE 33V 59V DO-214AA (SMB)	0
	SMCJ120C Meritek	TVS DIODE 120V 214V DO-214AB (SM	0
	SMBJ54C Meritek	TVS DIODE 54V 96.3V DO-214AA (SM	0
	SMDJ19CA Meritek	TVS DIODE 19V 30.8V DO-214AB (SM	0
	SMBJ19C Meritek	TVS DIODE 19V 34V DO-214AA (SMB)	0
	SMCJ13C Meritek	TVS DIODE 13V 23.8V DO-214AB (SM	0
	SMAJ64 Meritek	TVS DIODE 64V 114V DO-214AC (SMA	0
	SMDJ17 Meritek	TVS DIODE 17V 30.5V DO-214AB (SM	0
	SMBJ16 Meritek	TVS DIODE 16V 28.8V DO-214AA (SM	0
	SMBJ20C Meritek	TVS DIODE 20V 35.8V DO-214AA (SM	0
	SMDJ120C Meritek	TVS DIODE 120V 214V DO-214AB (SM	0
	SMDJ80C Meritek	TVS DIODE 80V 143.2V DO-214AB (S	0
	SMDJ140C Meritek	TVS DIODE 140V 250.6V DO-214AB (	0
	SMBJ48C Meritek	TVS DIODE 48V 85.5V DO-214AA (SM	0
	SMBJ10 Meritek	TVS DIODE 10V 18.8V DO-214AA (SM	0
	SMAJ80 Meritek	TVS DIODE 80V 143.2V DO-214AC (S	0
	SMCJ12C Meritek	TVS DIODE 12V 22V DO-214AB (SMC)	0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Unidirectional TVS	Single-polarity protection, asymmetrical voltage response	DC power lines, automotive systems
Bidirectional TVS	Symmetrical protection for AC signals	Telecom interfaces (e.g., RJ45), USB 3.0	Multichannel TVS	Multiple protection paths in single package	HDMI ports, DisplayPort interfaces	Automotive TVS	AEC-Q101 qualified, high surge capability	ECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

Silicon epitaxial layer for precise voltage control
Passivation layer (SiO2/Nitride) to reduce leakage current
Backside metallization for low-inductance packaging
DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

Parameter	Description	Importance
Breakdown Voltage (Vbr)	Minimum voltage where TVS activates	Determines protection threshold
Clamping Voltage (Vc)	Max voltage during transient event	Must be below protected IC's max rating
Peak Pulse Current (Ipp)	Maximum surge current handling	Defines robustness against large transients
Response Time (tresp)	Time to switch from off to on state	Crucial for ESD protection (typically <1ps)
Leakage Current (Ir)	Off-state current at working voltage	Impacts power efficiency

5. Application Areas

Major industries and typical equipment:

Telecommunications: 5G base stations, optical transceivers
Automotive: CAN/LIN bus protection, ADAS sensors
Industrial: PLCs, motor drives
Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

Manufacturer	Product Series	Key Features
Littelfuse	SP301x Series	USB 3.1 Gen2 protection, 0.35pF capacitance
ON Semiconductor	NUP41060	6-channel ESD protection, 30kV HBM
STMicroelectronics	ESDA8401	Automotive-grade, 150A surge rating
Infineon	ESD320	Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

Operating voltage must be below Vbr (typically 1.1 Voper)
Clamping voltage should stay under protected IC's maximum ratings
Packaging selection based on board space and thermal requirements
Environmental factors: temperature range, humidity resistance
Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
Integration: Combo devices with filters and shielding
Higher robustness: 40kV+ ESD protection for industrial IoT
Advanced materials: Silicon carbide (SiC) for high-temperature applications
AI-driven selection tools for optimized component matching