TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
TPD2E007YFMRG4

TPD2E007YFMRG4

Texas Instruments

TVS DIODE 13V 4DSLGA

3923

SN75240PWLE

SN75240PWLE

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

0

TPD4S009DBVR

TPD4S009DBVR

Texas Instruments

TVS DIODE 5.5V SOT23-6

12206

ESD224DQAR

ESD224DQAR

Texas Instruments

ESD224 4-CHANNEL LOW CAP ESD

1

TPD4E001DRSR

TPD4E001DRSR

Texas Instruments

TVS DIODE 5.5V 6SON

1680610000

TPD6E05U06RVZR

TPD6E05U06RVZR

Texas Instruments

TVS DIODE 5.5V 14V 14USON

0

TPD2E001DRST-NM

TPD2E001DRST-NM

Texas Instruments

TPD2E001 LOW-CAPACITANCE 2-CHANN

725

TPD1E10B06DPYT

TPD1E10B06DPYT

Texas Instruments

TVS DIODE 5.5V 14V 2X1SON

0

TPD3S014TDBVRQ1

TPD3S014TDBVRQ1

Texas Instruments

TVS DIODE SOT23-6

5913

TPD2E2U06QDCKRQ1

TPD2E2U06QDCKRQ1

Texas Instruments

TVS DIODE 5.5V 12.4V SC70-3

607

TPD4E1U06DCKR

TPD4E1U06DCKR

Texas Instruments

TVS DIODE 5.5V 15V SC70-6

12498

TPD1E10B09DPYT

TPD1E10B09DPYT

Texas Instruments

TVS DIODE 9V 20V 2X1SON

4741

TPD1E05U06DPYT

TPD1E05U06DPYT

Texas Instruments

TVS DIODE 5.5V 14V 2X1SON

0

TPD1E04U04DPLT

TPD1E04U04DPLT

Texas Instruments

TVS DIODE 3.6V 8.9V 2X2SON

790610000

TPD1E6B06DPLR

TPD1E6B06DPLR

Texas Instruments

TVS DIODE 5V 14V 2X2SON

101855

TPD4E05U06QDQARQ1

TPD4E05U06QDQARQ1

Texas Instruments

TPD4E05U06-Q1 AUTOMOTIVE 4-CHANN

66303

TPD4E001DPKR

TPD4E001DPKR

Texas Instruments

TVS DIODE 5.5V 6USON

4754

TPD2E001DZDR

TPD2E001DZDR

Texas Instruments

TVS DIODE 5.5V 4SOP

31022

TPD4E02B04QDQARQ1

TPD4E02B04QDQARQ1

Texas Instruments

TVS DIODE 3.6V 8.8V 10USON

1988

TPD4E6B06DPWR

TPD4E6B06DPWR

Texas Instruments

TVS DIODE 5.5V 13V 4X2SON

2293

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top