TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P6KE20AT/R

P6KE20AT/R

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 600W, CASE T

3000

P4KE13CT/R

P4KE13CT/R

EIC Semiconductor, Inc.

BI-DIRECTIONAL TVS 400W, CASE TY

20000

P6KE150ABULK

P6KE150ABULK

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 600W, CASE T

5000

1.5KE320ABULK

1.5KE320ABULK

EIC Semiconductor, Inc.

TVS 1500W, CASE TYPE: DO-201

4000

STBP5G4

STBP5G4

EIC Semiconductor, Inc.

TVS DIODE, 440V 400W, SMA

5000

P4KE30CAT/R

P4KE30CAT/R

EIC Semiconductor, Inc.

BI-DIRECTIONAL TVS 400W, CASE TY

10000

P6KE18ABULK

P6KE18ABULK

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 600W, CASE T

1000

P4KE400ABULK

P4KE400ABULK

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 400W, CASE T

3000

P4KE400AT/R

P4KE400AT/R

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 400W, CASE T

5000

5KP85CAT/R

5KP85CAT/R

EIC Semiconductor, Inc.

TVS 5000W, CASE TYPE: D6

1600

P4KE6.8BULK

P4KE6.8BULK

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 400W, CASE T

3000

BZW04P28B

BZW04P28B

EIC Semiconductor, Inc.

TVS 400W, CASE TYPE: DO-41

7998

P4KE200ABULK

P4KE200ABULK

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 400W, CASE T

3000

30KP60A

30KP60A

EIC Semiconductor, Inc.

TVS 30000W, CASE TYPE: D6

2160

P6KE6.8AT/R

P6KE6.8AT/R

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 600W, CASE T

6000

P6KE150AT/R

P6KE150AT/R

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 600W, CASE T

6000

P6KE220ABULK

P6KE220ABULK

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 600W, CASE T

500

P6KE51CABULK

P6KE51CABULK

EIC Semiconductor, Inc.

BI-DIRECTIONAL TVS 600W, CASE TY

2000

P6KE20ABULK

P6KE20ABULK

EIC Semiconductor, Inc.

UNI-DIRECTIONAL TVS 600W, CASE T

500

R15KP45

R15KP45

EIC Semiconductor, Inc.

TVS SINGLE UNI-DIR 55.55V 1.5KW

400

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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