TVS - Diodes

Part Number	Description / PDF	Quantity
1.5SMCJ8.0C Diotec Semiconductor	TVS SMC 8V 1500W BI	0
P6SMBJ58 Diotec Semiconductor	TVS SMB 58V 600W UNI	0
TPSMA6L18A-AQ Diotec Semiconductor	TVS SMAF 18V 600W UNI	0
P6SMBJ9.0 Diotec Semiconductor	TVS SMB 9V 600W UNI	0
TGL34-12CA Diotec Semiconductor	TVS DO-213AA 10.2V 150W BI	42500
TGL41-170A Diotec Semiconductor	TVS MELF 145V 400W UNI	0
1.5SMCJ78C Diotec Semiconductor	TVS SMC 78V 1500W BI	0
TGL41-200CA Diotec Semiconductor	TVS MELF 171V 400W BI	0
TGL34-75C Diotec Semiconductor	TVS DO-213AA 60.7V 150W BI	0
1.5SMCJ17C Diotec Semiconductor	TVS SMC 17V 1500W BI	0
TGL41-120A Diotec Semiconductor	TVS MELF 102V 400W UNI	0
P4SMAJ18C Diotec Semiconductor	TVS SMA 18V 400W BI	0
TGL41-62A Diotec Semiconductor	TVS MELF 53V 400W UNI	0
1.5SMCJ20 Diotec Semiconductor	TVS SMC 20V 1500W UNI	0
1.5SMCJ36C Diotec Semiconductor	TVS SMC 36V 1500W BI	0
5.0SMCJ48CA-AQ Diotec Semiconductor	TVS SMC 48V 5000W BI	0
P6SMBJ40 Diotec Semiconductor	TVS SMB 40V 600W UNI	0
1.5SMCJ5.0C Diotec Semiconductor	TVS SMC 5V 1500W BI	0
3.0SMCJ14CA Diotec Semiconductor	TVS SMC 14V 3000W BI	0
1.5SMCJ64CA Diotec Semiconductor	TVS SMC 64V 1500W BI	0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Unidirectional TVS	Single-polarity protection, asymmetrical voltage response	DC power lines, automotive systems
Bidirectional TVS	Symmetrical protection for AC signals	Telecom interfaces (e.g., RJ45), USB 3.0	Multichannel TVS	Multiple protection paths in single package	HDMI ports, DisplayPort interfaces	Automotive TVS	AEC-Q101 qualified, high surge capability	ECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

Silicon epitaxial layer for precise voltage control
Passivation layer (SiO2/Nitride) to reduce leakage current
Backside metallization for low-inductance packaging
DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

Parameter	Description	Importance
Breakdown Voltage (Vbr)	Minimum voltage where TVS activates	Determines protection threshold
Clamping Voltage (Vc)	Max voltage during transient event	Must be below protected IC's max rating
Peak Pulse Current (Ipp)	Maximum surge current handling	Defines robustness against large transients
Response Time (tresp)	Time to switch from off to on state	Crucial for ESD protection (typically <1ps)
Leakage Current (Ir)	Off-state current at working voltage	Impacts power efficiency

5. Application Areas

Major industries and typical equipment:

Telecommunications: 5G base stations, optical transceivers
Automotive: CAN/LIN bus protection, ADAS sensors
Industrial: PLCs, motor drives
Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

Manufacturer	Product Series	Key Features
Littelfuse	SP301x Series	USB 3.1 Gen2 protection, 0.35pF capacitance
ON Semiconductor	NUP41060	6-channel ESD protection, 30kV HBM
STMicroelectronics	ESDA8401	Automotive-grade, 150A surge rating
Infineon	ESD320	Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

Operating voltage must be below Vbr (typically 1.1 Voper)
Clamping voltage should stay under protected IC's maximum ratings
Packaging selection based on board space and thermal requirements
Environmental factors: temperature range, humidity resistance
Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
Integration: Combo devices with filters and shielding
Higher robustness: 40kV+ ESD protection for industrial IoT
Advanced materials: Silicon carbide (SiC) for high-temperature applications
AI-driven selection tools for optimized component matching