TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P4KE550A-E3/73

P4KE550A-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 495V 760V DO204AL

0

SM6T200CA-M3/5B

SM6T200CA-M3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 171V 274V DO214AA

0

SMBG24A-E3/5B

SMBG24A-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 24V 38.9V DO215AA

0

SMBJ70D-M3/I

SMBJ70D-M3/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 70V 111V DO214AA

9500

SMAJ5.0AHM3_A/H

SMAJ5.0AHM3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AC

0

SMB8J13CA-E3/5B

SMB8J13CA-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 13V 21.5V DO214AA

0

SMCJ12CAHE3/57T

SMCJ12CAHE3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 12V 19.9V DO214AB

0

1N6275A-E3/54

1N6275A-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 12.8V 21.2V 1.5KE

0

P6SMB36AHE3_A/I

P6SMB36AHE3_A/I

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

BZW04-40BHE3/73

BZW04-40BHE3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 40.2V 64.8V DO204AL

0

SMBJ28D-M3/H

SMBJ28D-M3/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 28V 44.7V DO214AA

7823

SMBG60A-M3/52

SMBG60A-M3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 60V 96.8V DO215AA

0

5KP9.0AHE3/54

5KP9.0AHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 9V 15.4V P600

0

SMCJ40A-E3/57T

SMCJ40A-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 40V 64.5V DO214AB

1658

SM6T15CAHE3_A/H

SM6T15CAHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 600W DO214AA

0

VBUS03B1-SD0HG4-08

VBUS03B1-SD0HG4-08

Vishay General Semiconductor – Diodes Division

TVS DIODE 3.3V 18V CLP0603

0

P4KE75CA-E3/73

P4KE75CA-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 64.1V 103V DO204AL

0

SMBJ45CA-M3/5B

SMBJ45CA-M3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 45V 72.7V DO214AA

0

SMBJ43CA-M3/5B

SMBJ43CA-M3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 43V 69.4V DO214AA

0

P6SMB130A-E3/5B

P6SMB130A-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 111V 179V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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