TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMBJ22CAHM4G

SMBJ22CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AA

0

SMCJ85A V6G

SMCJ85A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 85V 137V DO214AB

0

SMAJ16CA M2G

SMAJ16CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 16V 26V DO214AC

0

SMBJ12AHM4G

SMBJ12AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AA

0

SMCJ58CA V6G

SMCJ58CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 58V 93.6V DO214AB

0

SA48AHR0G

SA48AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO204AC

0

SMA4S18AH

SMA4S18AH

TSC (Taiwan Semiconductor)

400W, 10V - 70V, SMD TVS PG STRU

6985

1.5SMC15CA V6G

1.5SMC15CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO214AB

0

SMAJ22CHR3G

SMAJ22CHR3G

TSC (Taiwan Semiconductor)

400W 27.1V 10% BIDIRECTIONAL TVS

3600

1.5KE91CA R0G

1.5KE91CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 77.8V 125V DO201

0

P6SMB68A R5G

P6SMB68A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO214AA

0

SA40CA R0G

SA40CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 40V 64.5V DO204AC

0

P4SMA43CAHM2G

P4SMA43CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 36.8V 59.3V DO214AC

0

SA28AHR0G

SA28AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 59V DO204AC

0

P6KE68CAHR0G

P6KE68CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO204AC

0

1.5KE6.8CA A0G

1.5KE6.8CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO201

0

P4SMA11CA M2G

P4SMA11CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO214AC

0

P4SMA39CA M2G

P4SMA39CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 33.3V 53.9V DO214AC

0

P4KE11CA R0G

P4KE11CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO204AL

0

SMB10J20CA R5G

SMB10J20CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 32.4V DO214AA

780

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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