TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JTXV1N6140

JTXV1N6140

Semtech

T MET BI 1500W

0

1N6149AUS

1N6149AUS

Semtech

TVS DIODE 15.2V 27.7V

0

JTX1N6130A

JTX1N6130A

Semtech

T MET BI 500W 100V

0

JTXV1N6121

JTXV1N6121

Semtech

T MET BI 500W 43V

0

JTXV1N6138A

JTXV1N6138A

Semtech

T MET BI 1500W

0

JTXV1N6113AUS

JTXV1N6113AUS

Semtech

T MET BI 500W 20V

0

JTX1N6170AUS

JTX1N6170AUS

Semtech

T MET BI 1500W 150V SM

0

JAN1N6141AUS

JAN1N6141AUS

Semtech

TVS BI 1500W 8.65V SM

0

1N6170

1N6170

Semtech

TVS DIODE 114V 216.2V AXIAL

0

JTX1N6151A

JTX1N6151A

Semtech

T MET BI 1500W

0

JTXV1N6113

JTXV1N6113

Semtech

T MET BI 500W 20V

0

JTXV1N6126AUS

JTXV1N6126AUS

Semtech

T MET BI 500W 68V

0

JTX1N6167A

JTX1N6167A

Semtech

T MET BI 1500W

0

1N6173US

1N6173US

Semtech

TVS DIODE 152V 286V

0

JTX1N6169AUS

JTX1N6169AUS

Semtech

T MET BI 1500W 130V SM

0

JTXV1N6133AUS

JTXV1N6133AUS

Semtech

T MET BI 500W 130V

0

JTXV1N6115

JTXV1N6115

Semtech

T MET BI 500W 24V

0

1N6158

1N6158

Semtech

TVS DIODE 35.8V 67.7V AXIAL

0

JTX1N6131

JTX1N6131

Semtech

T MET BI 500W 83.6V HR

0

JTX1N6149

JTX1N6149

Semtech

T MET BI 1500W

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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