TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
HZL6.2Z4KRF-E

HZL6.2Z4KRF-E

Renesas Electronics America

ZENER DIODE, 6.2V, 4.8%, 0.1W

20000

RKZ18TKG#P1

RKZ18TKG#P1

Renesas Electronics America

ZENER DIODE, 18V

28163

RKZ6.8Z4KT#P1

RKZ6.8Z4KT#P1

Renesas Electronics America

ZENER DIODE, 6.8V

76000

HZM6.8Z4MWATL-E

HZM6.8Z4MWATL-E

Renesas Electronics America

ZENER DIODE, 6.8V, 3.93%, 0.2W

36500

HZM3.3WA-JTR-E

HZM3.3WA-JTR-E

Renesas Electronics America

ZENER DIODE

9000

HZM6.2ZMWATL-E

HZM6.2ZMWATL-E

Renesas Electronics America

ZENER DIODE, 6.2V, 4.84%, 0.2W

62906

HZM27FATL-E

HZM27FATL-E

Renesas Electronics America

TVS, 4-ELEMENT

35333

NNCD36J-T1-A

NNCD36J-T1-A

Renesas Electronics America

TVS DIODE 36V 2ULTRA

70348

NNCD5.6A-AZ

NNCD5.6A-AZ

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

0

HZM6.8MFATR-E

HZM6.8MFATR-E

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

10421

NNCD5.6B

NNCD5.6B

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

0

NNCD5.6B-T1-AZ

NNCD5.6B-T1-AZ

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

0

NNCD6.8RL(0)-T1-A

NNCD6.8RL(0)-T1-A

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

0

HZU10GTRF-E

HZU10GTRF-E

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

54000

NNCD6.8J-T1-A

NNCD6.8J-T1-A

Renesas Electronics America

TVS DIODE 6.8V 2ULTRA

111000

HZU6.8ZTRF-E

HZU6.8ZTRF-E

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

48000

HZU9.1GTRF-P-E

HZU9.1GTRF-P-E

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

36000

HZM6.8ZMWATL-E-Q

HZM6.8ZMWATL-E-Q

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

153000

NNCD5.1B

NNCD5.1B

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE

0

HZM6.2ZWATR-E

HZM6.2ZWATR-E

Renesas Electronics America

TRANS VOLTAGE SUPPRESSOR DIODE,

14463

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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