TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
4SMF13A

4SMF13A

Rectron USA

TVS 400W 13V 21.5V UNI SMAF

0

5.0SMCJ350A

5.0SMCJ350A

Rectron USA

TVS DIODE 5KW 350V 567V UNI SMC

0

SM8S36

SM8S36

Rectron USA

TVS DIODE 8W 36V 64.3V DO-218

0

4SMF43CA

4SMF43CA

Rectron USA

TVS 400W 43V 69.4V BI SMAF

0

3KPSMC10

3KPSMC10

Rectron USA

TVS DIODE 3KW 13.6V SMC

0

1.5FMCJ51

1.5FMCJ51

Rectron USA

TVS DIODE 1500W 41.3V UNI SMC

0

3KPSMC43

3KPSMC43

Rectron USA

TVS DIODE 3KW 58.4V SMC

0

SMA6F6.5CA

SMA6F6.5CA

Rectron USA

TVS DIO 600W 6.5V 11.2V BI SMAF

0

1.5FMCJ7.5

1.5FMCJ7.5

Rectron USA

TVS DIODE 1500W 6.05V UNI SMC

0

3KPSMC64A

3KPSMC64A

Rectron USA

TVS DIODE 3KW 78.6V SMC

0

TFMCJ10A

TFMCJ10A

Rectron USA

TVS DIO 1500W 10V 17V UNI SMC

0

P4FMAJ75A

P4FMAJ75A

Rectron USA

TVS DIO 400W 75V 103V UNI SMA

0

SMA6J170A

SMA6J170A

Rectron USA

TVS DIO 600W 170V 244V UNI SMA

0

SMCJ550CA

SMCJ550CA

Rectron USA

TVS 1.5KW 550V 860V BI SMC

0

TFMBJ11A

TFMBJ11A

Rectron USA

TVS DIO 600W 11V 18.2V UNI SMB

0

1.5FMCJ27A

1.5FMCJ27A

Rectron USA

TVS DIODE 1500W 23.1V UNI SMC

0

TFMAJ58A

TFMAJ58A

Rectron USA

TVS DIO 400W 58V 93.6V UNI SMA

0

1.5FMCJ150

1.5FMCJ150

Rectron USA

TVS DIODE 1500W 121V UNI SMC

0

TFMAJ6.0CA

TFMAJ6.0CA

Rectron USA

TVS DIODE 400W 6.0V 10.3V BI SMA

0

SMA6F30CA

SMA6F30CA

Rectron USA

TVS DIO 600W 30V 48.4V BI SMAF

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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