TVS - Diodes

Image	Part Number	Description / PDF	Quantity	Rfq
	TFMCJ110CA Rectron USA	TVS DIO 1500W 110V 177V BI SMC	0
	P4FMAJ56CA Rectron USA	TVS DIODE 400W 56V 77V BI SMA	0
	P6FMBJ82A Rectron USA	TVS DIO 600W 82V 113V UNI SMB	0
	SMA6F90A Rectron USA	TVS DIO 600W 90V 146V UNI SMAF	0
	TFMCJ15A Rectron USA	TVS DIO 1500W 15V 24.4V UNI SMC	0
	SMA6J200A Rectron USA	TVS DIO 600W 200V 287V UNI SMA	0
	SZM4F18A Rectron USA	TVS DIO 400W 18V 13.7V SOD-123F	0
	P4FMAF160 Rectron USA	TVS DIO 400W 160V 230V UNI SMAF	0
	SM5S26A Rectron USA	TVS DIODE 5W 26V 42.1V DO-218	0
	P6FMBJ480A Rectron USA	TVS DIO 600W 480V 658V UNI SMB	0
	5.0SMCJ350CA Rectron USA	TVS DIODE 5KW 350V 567V BI SMC	0
	TFMAJ110CA Rectron USA	TVS DIODE 400W 110V 177V BI SMA	0
	3KPSMC90A Rectron USA	TVS DIODE 3KW 111V SMC	0
	4SMF11A Rectron USA	TVS 400W 11V 18.2V UNI SMAF	0
	TFMBJ120CA Rectron USA	TVS DIODE 600W 120V 193V BI SMB	0
	SMA6J550A Rectron USA	TVS DIO 600W 550V 860V UNI SMA	0
	TFMBJ7.0A Rectron USA	TVS DIO 600W 7.0V 12V UNI SMB	0
	SMA6F45A Rectron USA	TVS DIO 600W 45V 72.7V UNI SMAF	0
	3KPSMC110 Rectron USA	TVS DIODE 3KW 149V SMC	0
	TFMBJ20A Rectron USA	TVS DIO 600W 20V 32.4V UNI SMB	0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Unidirectional TVS	Single-polarity protection, asymmetrical voltage response	DC power lines, automotive systems
Bidirectional TVS	Symmetrical protection for AC signals	Telecom interfaces (e.g., RJ45), USB 3.0	Multichannel TVS	Multiple protection paths in single package	HDMI ports, DisplayPort interfaces	Automotive TVS	AEC-Q101 qualified, high surge capability	ECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

Silicon epitaxial layer for precise voltage control
Passivation layer (SiO2/Nitride) to reduce leakage current
Backside metallization for low-inductance packaging
DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

Parameter	Description	Importance
Breakdown Voltage (Vbr)	Minimum voltage where TVS activates	Determines protection threshold
Clamping Voltage (Vc)	Max voltage during transient event	Must be below protected IC's max rating
Peak Pulse Current (Ipp)	Maximum surge current handling	Defines robustness against large transients
Response Time (tresp)	Time to switch from off to on state	Crucial for ESD protection (typically <1ps)
Leakage Current (Ir)	Off-state current at working voltage	Impacts power efficiency

5. Application Areas

Major industries and typical equipment:

Telecommunications: 5G base stations, optical transceivers
Automotive: CAN/LIN bus protection, ADAS sensors
Industrial: PLCs, motor drives
Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

Manufacturer	Product Series	Key Features
Littelfuse	SP301x Series	USB 3.1 Gen2 protection, 0.35pF capacitance
ON Semiconductor	NUP41060	6-channel ESD protection, 30kV HBM
STMicroelectronics	ESDA8401	Automotive-grade, 150A surge rating
Infineon	ESD320	Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

Operating voltage must be below Vbr (typically 1.1 Voper)
Clamping voltage should stay under protected IC's maximum ratings
Packaging selection based on board space and thermal requirements
Environmental factors: temperature range, humidity resistance
Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
Integration: Combo devices with filters and shielding
Higher robustness: 40kV+ ESD protection for industrial IoT
Advanced materials: Silicon carbide (SiC) for high-temperature applications
AI-driven selection tools for optimized component matching