TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SM8S16A

SM8S16A

Rectron USA

TVS DIODE 8W 16V 26V DO-218

0

P4SMAJ8.2CA

P4SMAJ8.2CA

Rectron USA

TVS DIO 400W 8.2V 12.1V BI SMA

0

P4FMAJ24A

P4FMAJ24A

Rectron USA

TVS DIO 400W 24V 33.2V UNI SMA

0

3KPSMC7.0A

3KPSMC7.0A

Rectron USA

TVS DIODE 3KW 8.60V SMC

0

TFMBJ17A

TFMBJ17A

Rectron USA

TVS DIO 600W 17V 27.6V UNI SMB

0

P4FMAF39

P4FMAF39

Rectron USA

TVS DIO 400W 39V 56.4V UNI SMAF

0

TFMAJ160CA

TFMAJ160CA

Rectron USA

TVS DIODE 400W 160V 259V BI SMA

0

P4FMAJ82CA

P4FMAJ82CA

Rectron USA

TVS DIODE 400W 82V 113V BI SMA

0

TFMBJ24A

TFMBJ24A

Rectron USA

TVS DIO 600W 24V 38.9V UNI SMB

0

1.5FMCJ170A

1.5FMCJ170A

Rectron USA

TVS DIODE 1500W 145V UNI SMC

0

TFMCJ7.0CA

TFMCJ7.0CA

Rectron USA

TVS DIO 1500W 7.0V 12V BI SMC

0

SMA2J33A

SMA2J33A

Rectron USA

TVS DIODE 400W 33V 53.3V UNI SMA

0

SMA2J18A

SMA2J18A

Rectron USA

TVS DIODE 400W 18V 29.2V UNI SMA

0

P4FMAJ110A

P4FMAJ110A

Rectron USA

TVS DIO 400W 110V 158V UNI SMA

0

3.0SMCJ220A

3.0SMCJ220A

Rectron USA

TVS DIODE 3KW 220V UNI SMC

0

1.5FMCJ24A

1.5FMCJ24A

Rectron USA

TVS DIODE 1500W 20.5V UNI SMC

0

SMA6F160A

SMA6F160A

Rectron USA

TVS DIO 600W 160V 259V UNI SMAF

0

SMA2J45A

SMA2J45A

Rectron USA

TVS DIODE 400W 45V 72.7V UNI SMA

0

SM5S15A

SM5S15A

Rectron USA

TVS DIODE 5W 15V 24.4V DO-218

0

4SMF20A

4SMF20A

Rectron USA

TVS 400W 20V 32.4V UNI SMAF

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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