TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCJ12CAHE3/57T

SMCJ12CAHE3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 12V 19.9V DO214AB

0

1N6275A-E3/54

1N6275A-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 12.8V 21.2V 1.5KE

0

MPLAD15KP11CA

MPLAD15KP11CA

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V PLAD

0

P6SMB36AHE3_A/I

P6SMB36AHE3_A/I

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

SMC30J8.5CA

SMC30J8.5CA

STMicroelectronics

TVS DIODE 8.5V 14.4V SMC

2475

BZW04-40BHE3/73

BZW04-40BHE3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 40.2V 64.8V DO204AL

0

SMBJ28D-M3/H

SMBJ28D-M3/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 28V 44.7V DO214AA

7823

P4KE7.5CA-G

P4KE7.5CA-G

Comchip Technology

TVS DIODE 6.4V 11.3V DO41

0

PGSMAJ36AHR3G

PGSMAJ36AHR3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SMCJ120CA V6G

SMCJ120CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 120V 193V DO214AB

0

SMBG60A-M3/52

SMBG60A-M3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 60V 96.8V DO215AA

0

MXSMBJSAC12

MXSMBJSAC12

Roving Networks / Microchip Technology

TVS DIODE 12V 19V DO214AA

0

SM15T200A

SM15T200A

STMicroelectronics

TVS DIODE 171V 353V SMC

766

5KP9.0AHE3/54

5KP9.0AHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 9V 15.4V P600

0

SMCJ40A-E3/57T

SMCJ40A-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 40V 64.5V DO214AB

1658

MA5KP33AE3

MA5KP33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO204AR

0

SM6T15CAHE3_A/H

SM6T15CAHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 600W DO214AA

0

SMDJ64

SMDJ64

Meritek

TVS DIODE 64V 114V DO-214AB (SMC

0

SMCJ54ATR

SMCJ54ATR

SMC Diode Solutions

TVS DIODE 54V 87.1V SMC

0

VBUS03B1-SD0HG4-08

VBUS03B1-SD0HG4-08

Vishay General Semiconductor – Diodes Division

TVS DIODE 3.3V 18V CLP0603

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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