TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
D4V5H1U2LP1610-7

D4V5H1U2LP1610-7

Zetex Semiconductors (Diodes Inc.)

TVS DIODE 4.5V 11.5V U-DFN1610-2

39203

MPLAD15KP26CAE3

MPLAD15KP26CAE3

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V PLAD

0

SMA6J6.0A-M3/5A

SMA6J6.0A-M3/5A

Vishay General Semiconductor – Diodes Division

TVS DIODE 6V 9.5V DO214AC

0

SMDJ36A V6G

SMDJ36A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO214AB

0

1.5SMC220CA-M3/57T

1.5SMC220CA-M3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 185V 328V DO214AB

0

1N6103US

1N6103US

Roving Networks / Microchip Technology

TVS DIODE 5.7V 11.76V B SQ-MELF

0

MSMLG100CAE3

MSMLG100CAE3

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO215AB

0

MXSMBG6.0CA

MXSMBG6.0CA

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO215AA

0

30KP170A-TP

30KP170A-TP

Micro Commercial Components (MCC)

TVS DIODE 170V 275V R-6

0

SMBJ48CA-E3/52

SMBJ48CA-E3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 48V 77.4V DO214AA

81

SMBG8.0CA-E3/52

SMBG8.0CA-E3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 8V 13.6V DO215AA

0

1KSMB56CA

1KSMB56CA

Wickmann / Littelfuse

TVS DIODE 47.8V 77V DO214AA

2900

SMBJ5.0CATR

SMBJ5.0CATR

SMC Diode Solutions

TVS DIODE 5V 9.2V SMB

1695

MSMCJ33CAE3

MSMCJ33CAE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AB

0

SMBJ90CA-HRA

SMBJ90CA-HRA

Wickmann / Littelfuse

TVS DIODE 90V 146V DO214AA

0

MA15KP58CA

MA15KP58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 94V DO204AR

0

1.5KE20CAHE3_A/D

1.5KE20CAHE3_A/D

Vishay General Semiconductor – Diodes Division

TVS DIODE 17.1V 27.7V 1.5KE

0

VTVS12GSMF-HM3-18

VTVS12GSMF-HM3-18

Vishay General Semiconductor – Diodes Division

TVS DIODE 12.4V 20.1V DO219AB

0

MART100KP45CA

MART100KP45CA

Roving Networks / Microchip Technology

TVS DIODE 45V 88.5V CASE 5A

0

SMB10J28CAHR5G

SMB10J28CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AA

1436

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top