Gas Discharge Tube Arresters (GDT)

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GDT 230V 50KA 3 POLE DIN RAIL

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GDT 230V 35KA 3 POLE DIN RAIL

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GDT 230V DIN RAIL

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GDT 90V 5KA DIN RAIL

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GDT TERM DUAL LVL DK 4 TS32 RC

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GDT DIN RAIL TERM BLK TYPEU TS32

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9400020000

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GDT 230V 2.5KA DIN RAIL

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9400400000

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GDT 90V 20KA DIN RAIL

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9400510000

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GDT 150V 20KA DIN RAIL

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8016960000

8016960000

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GDT 24V DIN RAIL

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9400540000

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GDT 600V 20KA DIN RAIL

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9402360000

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GDT 24V DIN RAIL

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8561250000

8561250000

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GDT 230V 50KA 3 POLE DIN RAIL

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9400300000

9400300000

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GDT 90V 5KA DIN RAIL

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8017000000

8017000000

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GDT 115V DIN RAIL

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9401960000

9401960000

Weidmuller

GDT TERM DUAL LVL DK 4 TS32 RC

0

9400440000

9400440000

Weidmuller

GDT 470V 20KA DIN RAIL

0

8016990000

8016990000

Weidmuller

GDT 115V DIN RAIL

0

8561220000

8561220000

Weidmuller

GDT 230V 50KA 3 POLE DIN RAIL

0

8016970000

8016970000

Weidmuller

GDT 48V DIN RAIL

0

Gas Discharge Tube Arresters (GDT)

1. Overview

Gas Discharge Tube Arresters (GDT) are voltage-dependent overvoltage protection devices that utilize ionization of gas to divert high-voltage transients to ground. They act as switches that remain non-conductive under normal operating conditions but rapidly transition to a low-impedance state when voltage exceeds a specific threshold. GDTs play a critical role in safeguarding electronic systems from lightning strikes, electrostatic discharge (ESD), and other transient voltage events in telecommunications, power distribution, and industrial automation systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Single-Electrode GDTCompact design with one gas chamber, suitable for low-energy transientsConsumer electronics, IoT devices
Multi-Electrode GDTStacked electrodes for higher energy absorption and multi-stage protectionTelecom infrastructure, 5G base stations
Inert Gas GDTUses argon/neon for stable performance in harsh environmentsIndustrial control systems, aerospace
Metal Vapor GDTMercury/xenon vapor for ultra-fast response timesHigh-speed data lines, medical imaging equipment

3. Structure and Components

Typical GDT construction includes:

  • Ceramic or glass cylindrical body with hermetic sealing
  • Tungsten/copper alloy electrodes with precision spacing
  • Inert gas (e.g., argon, neon) or metal vapor filling
  • External insulation coating (epoxy/silicone rubber)
  • Threaded/metallic base for grounding connection

4. Key Technical Specifications

ParameterTypical RangeImportance
DC Spark-over Voltage70V 5kVDetermines trigger threshold
Impulse Spark-over Voltage100V 10kVResponse under fast transients
Max Discharge Current10kA 100kAOverload handling capability
Response Time0.1 s 1 sCritical for ESD protection
Dielectric Strength1kV 20kV/mmPost-event insulation recovery

5. Application Fields

Major industry applications include:

  • Telecommunications: DSL modems, fiber optic transceivers, antenna protection
  • Industrial Automation: PLC systems, motor drives, sensor networks
  • Renewable Energy: Solar inverter DC inputs, wind turbine control cabinets
  • Railway Systems: Signaling equipment, traction converter protection
  • Case Study: 5G Base Station Implementation
    • Multi-electrode GDTs protect RF front-end modules from lightning surges
    • Combined with TVS diodes for multi-level protection architecture
    • Reduces maintenance costs by 40% in coastal deployments

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSPA-GDT SeriesHybrid gas-silicon integration, 10kA rating
Bourns2021 SeriesSurface-mount design, 500V breakdown
EatonPulsar GDT100kA max current, UL94 certified
MurataMA48 SeriesNano-coated ceramic body, -55 C~125 C operation

7. Selection Guidelines

Key considerations for GDT selection:

  1. Match breakdown voltage to system operating voltage (min. 1.2x nominal)
  2. Verify discharge current rating exceeds maximum expected surge (IEC 61643-11 compliance)
  3. Consider environmental factors (temperature, humidity, vibration)
  4. Assess mounting requirements (through-hole vs surface-mount)
  5. Coordinate with downstream protection devices for coordinated clamping
  6. Check certification standards (UL, CSA, RoHS)

8. Industry Trends

Future development directions:

  • Miniaturization for high-density PCB applications (sub-5mm diameters)
  • Advanced nanogap technologies for sub-nanosecond response times
  • Integration with AI-based predictive maintenance systems
  • Development of eco-friendly alternative gases to replace SF6
  • Wide bandgap semiconductor hybrid protection devices
  • Increased adoption in EV charging infrastructure (DC fast chargers)

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